| PART |
Description |
Maker |
| NX6410GH NX6410GH-AZ |
1 490 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
InGaAsP MQW-DFB LASER DIODE
|
California Eastern Labs
|
| NX5530SA NX5530SA-AZ |
1 550 nm Multiple Quantum Well (MQW) structured
|
California Eastern Labs
|
| M57788SH 57788SH |
490-512MHz, 12.5V, 40W, FM MOBILE RADIO 490 - 512MHz2.5V，功0W，调频移动通信
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| LD808-5-TO3 |
Output power5.0w(CW) Variety of stripe width Efficient quantum well structure
|
Roithner LaserTechnik GmbH
|
| M57729UH |
470-490 MHz, 12.5, 30W, FM MOBILE RADIO
|
Mitsubishi Electric Corporation
|
| EQ-733L |
EQ-733L is composed of an InAs Quantum Well Hall Element and a signal processing IC chip in a package
|
Asahi Kasei Microsystems
|
| EQ-731L |
EQ-731L is composed of an InAs Quantum Well Hall Element and a signal processing IC chip in a package
|
Asahi Kasei Microsystems
|
| M76DW63000A70Z |
64Mbit (x8/ x16, Multiple Bank, Boot Block) Flash Memory and 8Mbit/4Mbit SRAM, 3V Supply, Multiple Memory Product
|
ST Microelectronics
|
| H3YN-2 H3YN-41-Z H3YN H3YN-2-Z H3YN-21 H3YN-21-Z H |
Solid-state Timer (Miniature Timer with Multiple Time Ranges and Multiple Operating Modes)
|
http://
Omron Electronics LLC
|
| PD8931 PD8001 |
High quantum effciency, Very small dark current, High speed response
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M36WT864TF 8967 M36WV8B85ZA6T M36WT864 M36WT864B10 |
From old datasheet system
64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
