| PART |
Description |
Maker |
| PMV31XN PMV31XN-01 |
uTrenchMOS (tm) extremely low level FET
UTrenchMOS extremely low level FET
From old datasheet system
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| FMMT491A |
Very Low Equivalent Resistance, SOT23 NPN Rsilicon planar
|
TY Semiconductor Co., Ltd
|
| PMWD20XN |
Dual N-channel microTrenchMOS(tm) extremely low level FET
DUAL N-CHANNEL UTRENCHMOS EXTREMELY LOW LEVEL FET
|
NXP Semiconductors
Philips Semiconductors
|
| FMMTL717 |
Medium Power Transistor
Very low equivalent on-resistance;RCE(sat)=160mU at 1.25A
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| STP12N50M2 |
Extremely low gate charge
|
STMicroelectronics
|
| STD11N65M2 |
Extremely low gate charge
|
STMicroelectronics
|
| STFI11N65M2 STF11N65M2 |
Extremely low gate charge
|
STMicroelectronics
|
| MBD110DWT1 |
Extremely Low Minority Carrier Lifetime
|
TY Semiconductor Co., Ltd
|
| GFC048 |
N Channel Power MOSFET with extremely low RDS(on)
|
Gunter Seniconductor GmbH.
|
| GFC034 |
N Channel Power MOSFET with extremely low RDS(on)
|
Gunter Seniconductor GmbH.
|
| GFC240 |
N Channel Power MOSFET with extremely low RDS(on)
|
Gunter Seniconductor GmbH.
|
| DP030S |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
