| PART |
Description |
Maker |
| IRFU224PBF |
Dynamic dv/dt Rating
|
Kersemi Electronic Co., Ltd.
|
| SIHF630-E3 IRF630 |
Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated
|
Kersemi Electronic Co., Ltd.
Kersemi Electronic Co.,...
|
| IRF3205 |
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating
|
TY Semiconductor Co., Ltd
|
| VG26S17400EJ-5 VG26S17400EJ-6 VG26V17400EJ-5 VG26V |
4,194,304 x 4 - Bit CMOS Dynamic RAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24
SOCKET, 56 WAYSOCKET, 56 WAY; Ways, No. of:56; Colour:Grey; Current rating:8.5A; Dielectric strength, VAC:1800V; Resistance, insulation:5000MR; Voltage, working:125V
PLUG, 56 WAYPLUG, 56 WAY; Ways, No. of:56; Colour:Grey; Contacts, No. of:56; Current rating:8.5A; Dielectric strength, VAC:1800V; Poles, No. of:56; Resistance, insulation:5000MR; Voltage, working:125V
4/194/304 x 4 - Bit CMOS Dynamic RAM
|
Vanguard International ...
Vanguard International Semiconductor, Corp.
Vanguard International Semiconductor Corporation
|
| R5112X051D R5112X051B |
Input Voltage Range (Maximum Rating) 3.5 V to 42 V (50 V)
|
RICOH electronics devic...
|
| R1518J851D-T1-FE |
Input Voltage Range (Maximum Rating)
|
RICOH electronics devic...
|
| SK54AFL SK5200AFL |
Epoxy meets UL 94 V-0 flammability rating
|
Micro Commercial Compon...
|
| WAU160-750-S |
Primary Rating:120V 60Hz
|
TRIAD MAGNETICS
|
| FEDD56V16161N-01 |
2-Bank×524,288-Word×16-Bit SYNCHRONOUS DYNAMIC RAM
|
LAPIS Semiconductor Co....
|
| PA1219 |
1800-2000 MHz. Low Noise High Dynamic Range Linear Amplifier
|
Tyco Electronics
|
| PA1214 |
1800-2000 MHz. Low Noise High Dynamic Range Linear Amplifier
|
Tyco Electronics
|
| KM44V1000D |
1M x 4Bit CMOS Dynamic RAM with Fast Page Mode
|
Samsung semiconductor
|
