| PART |
Description |
Maker |
| FT232HL-REEL FT232HL-TRAY FT232HQ-REEL FT232HQ-TRA |
Future Technology Devices International Ltd
|
List of Unclassifed Manufacturers
List of Unclassifed Manufac...
|
| UPC8232T5N-E2-A UPC8232T5N UPC8232T5N-E2 |
B IPOLAR ANALOG INTE GR ATE D CIR CUIT
|
California Eastern Labs
|
| 2FB96F 2FB96M 2FB30F |
FUTURE BUS 2.00mm CENTERLINE EIA STANDARD
|
Adam Technologies, Inc.
|
| TGUI9440-2 TGUI9440-R |
GUI Accelerator
TGUI9440-2 With Future ISA Bus Support
|
Trident
List of Unclassifed Manufacturers
|
| PIC18F85J90_84J90_83J90 PIC18F85J90 PIC18F64J90-I_ |
LCD PIC18F Microcontroller with 32K bytes of Flash and 2048 bytes of RAM. These devices are easily a
64/80-Pin, High-Performance Microcontrollers with LCD Driver and nanoWatt Technology
|
Microchip Technology Inc.
Microchip Technology, Inc.
MICROCHIP[Microchip Technology]
|
| TSOP17..XG1 TSOP1730XG102 UC1682XFBZ UPC8232T5N-E2 |
Synchronous Step-Down DC/DC Converter with built-in LDO Regulator in parallel plus Voltage Detector 同步降压型DC / DC转换器内置LDO的同时加电压检测器调节
High Performance 8-bit Microcontroller
HIGH-VOLTAGE MIXED-SIGNAL IC
B IPOLAR ANALOG INTE GR ATE D CIR CUIT
|
Torex Semiconductor, Ltd.
ETC
CEL
TOREX[Torex Semiconductor]
|
| EPC1064V EPC1213 EPC1441 |
Configuration Devices for ACEX/ APEX/ FLEX & Mercury Devices
|
Altera Corporation
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| PICOSMD035F MINISMDC100F MINISMDC200S MINISMDC150F |
PolySwitch Resettable Devices Surface-mount Devices
|
Tyco Electronics
|
| EPC1064 EPC1064V EPC1 EPC1213 EPC1441 EP20K200C EP |
CONFIGURATION DEVICES FOR SRAM-BASED LUT DEVICES
|
Altera Corporation
ETC
|
