| PART |
Description |
Maker |
| FT231XS-X FT231XQ-X DSFT231X FT231XQ-T FT231XS-R |
Future Technology Devices International Ltd FT231X
Single chip USB to asynchronous serial data transfer interface
Future Technology Devices International Ltd.
|
List of Unclassifed Manufacturers
Future Technology Devices I...
Future Technology Devic...
|
| VNC1L-1A-TRAY VNC1L-1A-REEL |
Vinculum VNC1L Embedded USB Host Controller IC
Future Technology Devices International Ltd.
|
Future Technology Devices International Ltd.
|
| UPC8232T5N UPC8232T5N-E2 |
B IPOLAR ANALOG INTE GR ATE D CIR CUIT
|
California Eastern Laboratories
|
| UPC8232T5N-E2-A UPC8232T5N UPC8232T5N-E2 |
B IPOLAR ANALOG INTE GR ATE D CIR CUIT
|
California Eastern Labs
|
| EP1AGX50CF484C6N EP1AGX50DF1152C6N EP1AGX50DF1152I |
The ArriaTM GX family of devices combines 3.125 gigabits per second (Gbps) serial transceivers with reliable packaging technology
|
Altera Corporation
|
| AN209 |
Using Terminator Technology in Stratix & Stratix GX Devices
|
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
ETC[ETC]
Altera Corporation
|
| TGUI9440-2 TGUI9440-R |
GUI Accelerator
TGUI9440-2 With Future ISA Bus Support
|
Trident
List of Unclassifed Manufacturers
|
| EPC1064V EPC1213 EPC1441 |
Configuration Devices for ACEX/ APEX/ FLEX & Mercury Devices
|
Altera Corporation
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| NANOSMDM100 |
PolySwitch PTC Devices / Circuit Protection Devices
|
Tyco Electronics
|
