| PART |
Description |
Maker |
| AP01L60H-H |
100% Avalanche Rated, Fast Switching Speed
|
Advanced Power Electronics Corp.
|
| IXFH26N50P IXFV26N50PS IXFV26N50P |
Avalanche Rated Fast Instrinsic Diode
|
IXYS[IXYS Corporation]
|
| MMIX1F132N50P3 |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
|
IXYS Corporation
|
| IXFP14N85X |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| IXTA110N12T2 |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
|
IXYS Corporation
|
| MMIX1F520N075T2 |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| IRFV360 |
400V Single N-Channel Hi-Rel MOSFET in a TO-258AA package
REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR
|
IRF[International Rectifier]
|
| BUZ104S Q67040-S4007-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175∑C operating temperature) 14 A, 55 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
SIPMOS ? Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature)
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175°C operating temperature)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| IRFE210 JANTXV2N6784U JANTX2N6784U |
200V Single N-Channel Hi-Rel MOSFET in a 18-pin LCC package 200伏单N沟道高可靠性的18 MOSFET的引脚LCC封装
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET-R?TRANSISTORS SURFACE MOUNT (LCC-18)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET-R剖TRANSISTORS SURFACE MOUNT (LCC-18)
|
International Rectifier, Corp.
IRF[International Rectifier]
|
