| PART |
Description |
Maker |
| 2SB806 |
High collector to emitter voltage: VCEO?120V. Collector-base voltage VCBO -120 V
|
TY Semiconductor Co., Ltd
|
| KSC2881 |
Collector-Emitter Voltage : VCEO=120V
|
TY Semiconductor Co., Ltd
|
| 2SC2946 |
High Votage VCEO=200V High speed tf us Collector to base voltage VCBO 330 V
|
TY Semiconductor Co., Ltd
|
| 2SC1653 |
High DC current gain.hFE=130 typ.(VCE=3.0V,IC=15mA) High voltage VCEO : 130V
|
TY Semiconductor Co., Ltd
|
| CSD363 CSD363O CSD363R CSD363Y |
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 40 - 240 hFE.
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 70 - 140 hFE.
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 40 - 80 hFE.
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 120 - 240 hFE.
|
Continental Device India Limited
|
| FCX705_02 705 FCX705 FCX705TA FCX70502 |
120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR
|
ZETEX[Zetex Semiconductors]
|
| BD115 |
0.875W High Voltage NPN Metal Can Transistor. 180V Vceo, 0.200A Ic, 22 hFE.
|
Continental Device India Limited
|
| 2SC4102 2SA1514K A5800309 |
High-Voltage Amplifier Transistor (-120V, -50mA)
From old datasheet system
|
ROHM
|
| 2SD1006 |
High collector to emitter voltage: VCEO 100V. Collector-base voltage VCBO 100 V
|
TY Semiconductor Co., Ltd
|
