| PART |
Description |
Maker |
| 0879331007 87933-1007 |
1.27mm (.050) Pitch Wire-to-Board Header, Dual Row, SMT, Vertical, 10 Circuits, 0.05μm (2μ) Gold (Au) Plating, Mating Pin Length 1.65mm (0.065), with Cap
1.27mm (.050) Pitch Wire-to-Board Header, Dual Row, SMT, Vertical, 10 Circuits, 0.05渭m (2渭) Gold (Au) Plating, Mating Pin Length 1.65mm (0.065), with Cap
|
http://
Molex Electronics Ltd.
|
| RF1S23N06LESM |
23A, 60V, 0.065 Ohm, Logic Level,N-Channel Power MOSFETs(23A, 60V, 0.065 Ω,逻辑电平,N沟道功率MOS场效应管) 23 A, 60 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
Intersil, Corp.
|
| 87933-1211 |
1.27mm (.050) Pitch Wire-to-Board Header, Dual Row, SMT, Vertical, 100 Circuits, 0.38μm (15μ) Gold (Au) Plating, Mating Pin Length 1.65mm (0.065), with Cap
|
Molex Electronics Ltd.
|
| KO3400 AO3400 |
VDS (V) = 30V ID= 5.8 A (VGS = 10V) RDS(ON) 28m (VGS = 10V) RDS(ON) 33m (VGS = 4.5V)
|
TY Semiconductor Co., Ltd
|
| RFP30P06 RF1S30P06SM RFG30P06 RF1S30P06 FN2437 |
30A/ 60V/ 0.065 Ohm/ P-Channel Power MOSFETs
From old datasheet system
30A 60V 0.065 Ohm P-Channel Power MOSFETs
30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs(30A, 50V, 0.066 Ω,P沟道增强型功率MOS场效应管) 30 A, 60 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| SI2304DS |
30 0.117 @ VGS = 10 V 0.190 @ VGS = 4.5 V
|
TY Semiconductor Co., Ltd
|
| KDB3672 |
rDS(ON) =24m (Typ.), VGS = 10V, ID =44A Qg(tot) = 24nC (Typ.), VGS = 10V
|
TY Semiconductor Co., L...
|
| SSP45N20A |
35 A, 200 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
|
| STS4NF100 |
N-CHANNEL 100V - 0.065 OHM - 4A SO-8 STRIPFET II POWER MOSFET
|
SGS Thomson Microelectronics
|
| FM120-M FM130-M FM150-M FM180-M FM160-M FM140-M FM |
CABLE ASSEM 2MM 10POS SGL END 2,1
Silicon epitaxial planer type
.050 X .050 MICRO STRIPS
|
美丽微半导体有限公司
|
| HRS2B40GA HRS2B40GSMT HRS2B40GSMT-A HRS2B40GSMT-B |
.050 RECEPTACLE STRIPS .050 [1.27] CENTERLINE
|
Adam Technologies, Inc.
|
| TSR-065 |
Trimming Potentiometer - TSR-065
|
Suntan Capacitors
|
|
