| PART |
Description |
Maker |
| NE5531079A-A NE5531079A-T1-A NE5531079A-T1A |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET LEAD FREE, 79A, 4 PIN
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
|
Duracell
Renesas Electronics Corporation
|
| 2SC4082M 2SA1885 2SA1885S |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR
|
Vishay Intertechnology, Inc.
|
| KDV153 KDV153A KDV153B KDV153D |
TV VHF, UHF tuner AFC VCO for UHF band radio
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TV VHF,UHF TUNER AFC VCO FOR UHF BAND RADIO)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| D1009UK |
METAL GATE RF SILICON FET 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
TT electronics Semelab, Ltd.
Seme LAB
|
| D1029UK |
METAL GATE RF SILICON FET 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| SST5912T1 |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET
|
CALOGIC LLC
|
| UTV120 |
UHF TV 470-860 MHz, Class A, Common Emitter; fO (MHz): 860; P(out) (W): 12; Gain (dB): 8.9; Vcc (V): 26.5; ICQ (A): 1.7; IMD Type (dB): -52; Case Style: 55JT-2 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
| BFM35 |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
SEMELAB LTD
|
| AP85035 |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
STMICROELECTRONICS
|
| MRF1508 |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
|
| BF980 |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
|
NXP SEMICONDUCTORS
|
| RDL212 |
UHF Multi Channel Wide Band FM Transceiver
|
Radiometrix Ltd
|
|
