| PART |
Description |
Maker |
| FDC6308P |
Low gate charge ( typical 9 nC).
|
TY Semiconductor Co., Ltd
|
| KQB6N70 |
6.2A, 700 V. RDS(ON) = 1.5 VGS = 10 V Low gate charge (typical 130nC)
|
TY Semiconductor Co., Ltd
|
| STL30NF3LL |
N-CHANNEL 30V 0.006 OHM 30A POWERFLAT LOW GATE CHARGE STRIPFET II MOSFET
N-CHANNEL 30V - 0.008ohm - 30A PowerFLAT⑩ LOW GATE CHARGE STripFET⑩ MOSFET
N-CHANNEL 30V 0.0055 OHM 28A POWERFLAT LOW GATE CHARGE STRIPFET II MOSFET
N-CHANNEL 30V - 0.008ohm - 30A PowerFLAT LOW GATE CHARGE STripFET MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STS8DNF3LL |
DUAL N-CHANNEL 30V - 0.017 OHM - 8A SO-8 LOW GATE CHARGE STRIPFET II POWER MOSFET
DUAL N-CHANNEL 30V - 0.017 ohm - 8A SO-8 LOW GATE CHARGE STripFET II POWER MOSFET
DUAL N-CHANNEL 30V - 0.017 ohm - 8A SO-8 LOW GATE CHARGE STripFET⑩ II POWER MOSFET
DUAL N-CHANNEL 30V - 0.017 ohm - 8A SO-8 LOW GATE CHARGE STripFETII POWER MOSFET 双N沟道30V 0.017欧姆- 8A条的SO - 8低栅极电荷STripFET⑩二功率MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
|
| STL20NM20N06 STL20NM20N |
N-CHANNEL 200V - 0.088Ω - 20A PowerFLAT ULTRA LOW GATE CHARGE MDmesh II MOSFET
N-CHANNEL 200V - 0.088ヘ - 20A PowerFLAT⑩ ULTRA LOW GATE CHARGE MDmesh⑩ II MOSFET
|
STMicroelectronics
|
| STB70NF03L-1 STP70NF03L |
BOX MOUNTING RECEPTACLE N沟道30V 0.008ohm - 70A条TO-220/I2PAK低栅极电荷STripFET⑩功率MOSFET
Niobium Oxide Capacitor; Capacitor Type:Low ESR; Voltage Rating:4VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:220uF; Capacitance
N-CHANNEL MOSFET
N-CHANNEL 30V - 0.008ohm - 70A TO-220/I2PAK LOW GATE CHARGE STripFET POWER MOSFET
N-CHANNEL 30V - 0.008ohm - 70A TO-220/I2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET
N-CHANNEL 30V - 0.008 OHM -70A TO-220/I2PAK LOW GATE CHARGE STRIPFET POWER MOSFET
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| AP9T19GJ |
Low Gate Charge, Capable of 2.5V gate drive
|
Advanced Power Electronics Corp.
|
| IXFH52N30Q IXFK52N30Q IXFT52N30Q |
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances
From old datasheet system
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances 52 A, 300 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| STB40NF1007 STB40NF10T4 STB40NF10 |
N-channel 100V - 0.025Ω - 50A - D2PAK Low gate charge STripFET II Power MOSFET
N-channel 100V - 0.025ヘ - 50A - D2PAK Low gate charge STripFET⑩ II Power MOSFET
|
STMicroelectronics
|
| P40NF10L 8916 STP40NF10L |
N-CHANNEL 100V - 0.028 OHM - 40A TO-220 LOW GATE CHARGE STRIPFET POWER MOSFET
N-CHANNEL 100V - 0.028 OHM - 40A TO-220 LOW GATE CHARGE STRIPFET POWER MOSFET
From old datasheet system
N-CHANNEL 100V - 0.028ohm - 40A TO-220 LOW GATE CHARGE STripFET POWER MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STS5P3LLH6 |
Very low gate charge
|
STMicroelectronics
|
