PART |
Description |
Maker |
UPC3227TB-E3 UPC3227TB-E3-A |
5 V, SILICON GERMANIUM MMIC WIDEBAND AMPLIFIER
|
NEC
|
BFU725F-N1 BFU725F11 BFU725F-N1-15 |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode 100 V, 500 mA, gold bonded germanium diode 12 V, 500 mA, gold bonded germanium diode 90 V, 500 mA, gold bonded germanium diode GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION) 75 V, 500 mA, gold bonded germanium diode 120 V, 500 mA, gold bonded germanium diode 70 V, 500 mA, gold bonded germanium diode 80 V, 500 mA, gold bonded germanium diode 115 V, 500 mA, gold bonded germanium diode 60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics ETC[ETC]
|
BGA7L1N6 |
Silicon Germanium Low Noise Amplifier for LTE
|
Infineon Technologies A...
|
BGA628L7 |
Silicon Germanium Wide Band Low Noise Amplifier
|
Infineon Technologies AG
|
SGL0263Z SGL0263ZSQ SGL0263ZSR |
1400MHz to 2500MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER
|
RF Micro Devices
|
SGL-0622Z1 SGL-0622Z |
5 - 4000 MHz Low Noise MMIC Amplifier Silicon Germanium
|
SIRENZA MICRODEVICES
|
RQG1001UPAQF RQG1001UP-TL-E |
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
|
RENESAS[Renesas Electronics Corporation]
|
RQG1001UP-TL-E |
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
|
Renesas Electronics Corporation.
|
BFP740 |
Ultra Low Noise SiGe:C Heterojunction Bipolar Transistors (HBTs) in SOT343 and TSFP-4 Package NPN Silicon Germanium RF Transistor
|
INFINEON[Infineon Technologies AG]
|
EL2125 EL2125CS-T13 EL2125CS-T7 EL2125CW-T7 EL2125 |
Ultra-Low Noise, Low Power, Wideband Amplifier Op Amp, 175MHz Wideband, Ultra Low Noise 0.83nV/√Hz, Low Power, 2.5-15VDC Ultra-Low Noise/ Low Power/ Wideband Amplifier
|
Intersil Corporation
|