PART |
Description |
Maker |
PIC16F87-E |
18/20/28-Pin Enhan lashMicrocontrollers with nanoWatt Technology
|
Microchip Technology
|
IXTK100N25P IXTQ100N25P IXTT100N25P |
Discrete MOSFETs: Standard N-channel Types PolarHT Power MOSFET N-Channel Enhancement Mode
|
IXYS Corporation
|
IXTQ64N25 IXTQ64N25P IXTT64N25P |
Discrete MOSFETs: Standard N-channel Types PolarHT Power MOSFET
|
IXYS[IXYS Corporation]
|
IXTQ69N30 IXTQ69N30P IXTT69N30P |
PolarHT Power MOSFET 69 A, 300 V, 0.049 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA Discrete MOSFETs: Standard N-channel Types
|
IXYS, Corp. IXYS[IXYS Corporation]
|
IXFH120N20P |
PolarHT HiPerFET Power MOSFET 120 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
IXYS, Corp.
|
IXFV96N15PS IXFH96N15P |
PolarHT HiPerFET Power MOSFET 96 A, 150 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS Corporation
|
IXTA62N15P IXTP62N15P IXTQ62N15P |
PolarHT Power MOSFET
|
http:// IXYS Corporation
|
IXFN180N15P |
PolarHT HiPerFET Power MOSFET
|
IXYS[IXYS Corporation]
|
IXFN140N20P |
PolarHT HiPerFET Power MOSFET
|
http://
|
BSM101AR C67076-S1018-A2 BSM101 |
From old datasheet system SIMOPAC Module (Power module Single switch N channel Enhancement mode) SIMOPAC模块(单开关电源模块N通道增强模式 SIMOPAC Module (Power module Single switch N channel Enhancement mode) 200 A, 50 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
|
BSM111AR C67076-S1013-A2 BSM111 |
SIMOPAC Module (Power module Single switch N channel Enhancement mode) 200 A, 100 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET SIMOPAC Module (Power module Single switch N channel Enhancement mode) SIMOPAC模块(单开关电源模块N通道增强模式
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor Toshiba Corporation
|