| PART |
Description |
Maker |
| HSM107S |
MPAK package is suitable for high density surface mounting and high speed assembly.
|
TY Semiconductor Co., Ltd
|
| UT2316L-AE3-R UT2316-AE3-R |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.86 to 6.53; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK N沟道增强模式
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.86 to 6.12; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.86 to 6.53; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
N-CHANNEL ENHANCEMENT MODE
|
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
|
| TMP47P422VN TMP47P422VF TMP47P422VU |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.86 to 21.08; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 的CMOS 4位微控制
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.65 to 2.90; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 的CMOS 4位微控制
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.86 to 19.70; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 的CMOS 4位微控制
|
Toshiba, Corp.
|
| TMP86C822UG |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 3.10 to 3.35; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
|
Toshiba Corporation
|
| TMP19A43FZXBG |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 1.90 to 2.20; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 32位RISC微处理器
|
Toshiba, Corp.
|
| TMP19A43CD |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.94 to 17.70; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 32位RISC微处理器
|
Toshiba, Corp.
|
| TMP86C846NG |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 3.70 to 4.10; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 8位微控制
|
Toshiba, Corp.
|
| TMP86C829BUG |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 3.40 to 3.80; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 8位微控制
|
Toshiba, Corp.
|
| TMP19A64C1DXBG |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.10 to 2.40; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 32位RISC微处理器
|
Toshiba, Corp.
|
| WP7104PGD |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 6.86 to 7.14; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
T-1 (3mm) SOLID STATE LAMP
|
Kingbright Corporation.
|
| HVD369B |
Super small Flat Package (SFP) is suitable for surface mount design
|
TY Semiconductor Co., Ltd
|
| S8119 |
MOSFET, Switching; VDSS (V): 60; ID (A): 1.5; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.173]; RDS (ON) typ. (ohm) @2.5V: 0.207; Ciss (pF) typ: 200; toff (µs) typ: 0.035; Package: MPAK 图片集成电路光开
|
Hamamatsu Photonics K.K.
|
