| PART |
Description |
Maker |
| 2SB1073 |
Low collector-emitter saturation voltage VCE(sat) Large peak collector current ICP
|
TY Semiconductor Co., Ltd
|
| 2SD1691L-X-TA3-T 2SD1691G-X-T60-K 2SD1691G-X-T6C-K |
LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT
5 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
UNISONIC TECHNOLOGIES CO LTD
|
| 2SD1691 |
LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT
|
Unisonic Technologies
|
| KSB1151 |
PNP (LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT)
|
SAMSUNG[Samsung semiconductor]
|
| 2SB1151-T60-T 2SB1151L-T60-T 2SB1412-TN3-F-R 2SB14 |
NPN SILICON TRANSISTOR
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
HIGH VOLTAGE HIGH SPEED SWITCHING
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
HIGH VOLTAGE SWITCHING TRANSISTOR
LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT
|
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| FZT591 |
Power Collector dissipation: PC=2W, Continuous Collector Current: IC=-1A
|
TY Semiconductor Co., Ltd
|
| FCX591 |
Power Collector dissipation: PC=1W, Continuous Collector Current: IC=-1A
|
TY Semiconductor Co., Ltd
|
| DN100 |
Extremely low collector-to-emitter saturation voltage
Suitable for low voltage large current drivers
|
KODENSHI KOREA CORP.
|
| 93C56 93C56AEP 93C56AESN 93C56BESN 93C56BEP |
2K 5.0V Automotive Temperature Microwire Serial EEPROM
2K 5.0V Automotive Temperature Microwire Serial EEPROM
Dissipation, Pd:22.2W; Package/Case:MiniDIP; C-E Breakdown Voltage:600V
IGBT Module; Continuous Collector Current, Ic:5A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:16.7W; C-E Breakdown Voltage:600V; Collector Current:5A; Collector Emitter Voltage, Vceo:600V RoHS Compliant: No
|
Microchip Technology Inc.
|
| RCU1383U-A RCU1383UA A5800188 |
N-CHANNEL SILICON JUNCTION FET TO52
From old datasheet system
24x24 dots transmissive large-sized liquid crystal display unit
24 x 24 dots transmissive large-sized liquid crystal display unit
LCD Displays > Large Display Unit (General Purpose)
|
Rohm CO.,LTD.
ROHM[Rohm]
|
| 2SJ621 2SJ621-T2B 2SJ621-T1B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC Corp.
NEC[NEC]
|
| PPS10 PPS10-3900 PPS10-7800 |
DC power shelf systems provide large power system
|
Power-One
|
