| PART |
Description |
Maker |
| TOPP244R TOP242-249 TOP243P TOP245Y TOP242G |
Family Extended Power/ Design Flexible/Integrated Off-line Switcher
Family Extended Power, Design Flexible,Integrated Off-line Switcher 家庭扩展的电源，设计灵活，集成的离线切换
Family Extended Power, Design Flexible,Integrated Off-line Switcher 1.44 A SWITCHING REGULATOR, 140 kHz SWITCHING FREQ-MAX, PDIP7
Family Extended Power / Design Flexible / Integrated Off-line Switcher
|
Power Integrations Inc.
Power Integrations, Inc.
POWER INTEGRATIONS INC
|
| XCV405E-8BG560C XCV405E-8BG560I XCV405E-8FG560C XC |
Fast, Extended Block RAM, 1.8 V FPGA Family
Extended Memory Field Programmable Gate Arrays
|
XILINX[Xilinx, Inc]
Xilinx, Inc.
|
| P87C51MB2BA P87C51MC2BA |
80C51 8-bit microcontroller family with extended memory; 64 kB-96 kB OTP with 2 kB-3 kB RAM
|
NXP Semiconductors N.V.
|
| PBA31308/2V1.01 |
BlueMoon? Universal Family Extended to Embedded Data Transfer Applications
|
Infineon Technologies AG
|
| TOP248Y TOP243Y |
(TOP242 - TOP250) Family Extended Power/ Design Flexible/Integrated Off-line Switcher
|
Power Integrations
|
| TOP100-4 TOP101AI TOP102YI TOP103YA TOP104YAI TOP1 |
Three-terminal Off-line PWM Switch
0-60 W Topswitch Using a 100/110 Vac Input
From old datasheet system
|
Power Integrations Inc
POWERINT[Power Integrations, Inc.]
|
| K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4 |
8M X 8 EDO DRAM, 45 ns, PDSO32
8M x 8bit CMOS Dynamic RAM with Extended Data Out 8米8位的CMOS动态随机存储器的扩展数据输
(K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4E640812B K4E660812B K4E640812B-JC-45 K4E640812B- |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM48V8104C KM48V8004C KM48V8104CK-45 KM48V8104CKL- |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| STE STE600016T4KI STE600016T4KX STE600016T4MI STE6 |
SuperTan? Extended (STE) Capacitors Wet Tantalum with Hermetic Seal
SuperTan庐 Extended (STE) Capacitors Wet Tantalum with Hermetic Seal
SuperTan㈢ Extended (STE) Capacitors Wet Tantalum with Hermetic Seal
|
Vishay Siliconix
|
