| PART |
Description |
Maker |
| IXA20IF1200HB |
Easy paralleling due to the positive temperature Easy paralleling due to the positive temperature
|
IXYS Corporation
|
| STN4536 |
Due N Channel Enhancement Mode MOSFET
|
Stanson Technology
|
| WSYN-50-120-12DC-A WSYN-400-220-12DC-A WSYN-400-40 |
POWER/SIGNAL RELAY, DPST, MOMENTARY, 12VDC (COIL), 5A (CONTACT), 28VDC (CONTACT), PANEL MOUNT
Paralleling Relays
|
Tyco Electronics
|
| AOK20B120E2 |
Minimal gate spike due to high input capacitance
|
Alpha & Omega Semicondu...
|
| IPT0806-SEI |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., LTD.
|
| 4U-0010-0650-1 2U-0010-0148-8 2U-0010-0149-6 2U-00 |
This specification was revised due to the requirement described below.
This specification was revised due to the requirement described below.
|
3M Electronics
|
| LXDC2HL10A-080 LXDC2HL1DA-087 LXDC2HL25A-053 LXDC2 |
Low EMI noise and small footprint due to Murata’s inductor-embedded ferrite substrate technology
|
Murata Manufacturing Co., Ltd.
|
| AOK20B120D1 |
Low turn-off switching loss due to fast turn-off time
|
Alpha & Omega Semicondu...
|
| MCP111 MCP112 MCP111-195 MCP112T-475E MCP111T-195I |
The MCP111/112 Series are CMOS voltage detectors are well suited for portable, consumer electrics applications due to the extremely ...
Micropower Voltage Detector
|
MICROCHIP[Microchip Technology]
|
| L2C3-4080107E06000 L2C3-4080105B06000 L2C3-4080105 |
Unsurpassed light quality and CBCP due to small LES
|
Lumileds Lighting Compa...
|
| IPT12Q06-BEF |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., L...
|
