| PART |
Description |
Maker |
| IRHNB8Z60 IRHNB3Z60 IRHNB4Z60 IRHNB7Z60 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT
RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3)
30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package
30V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package
|
IRF[International Rectifier]
|
| STS5DNE30L 6147 |
N - CHANNEL 30V - 0.039 Ohm - 5A SO-8 STripFET POWER MOSFET
N - CHANNEL 30V - 0.039ohm - 5A SO-8 STripFETO POWER MOSFET
From old datasheet system
N - CHANNEL 30V - 0.039 - 5A SO-8 STripFET TM POWER MOSFET
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
ST Microelectronics
|
| FDS4435BZ07 FDS4435BZ |
P-Channel PowerTrench? MOSFET -30V, -8.8A, 20mΩ
P-Channel PowerTrench㈢ MOSFET -30V, -8.8A, 20mヘ
|
Fairchild Semiconductor
|
| STB3020L 6474 |
CSED, FLANGE KIT 400A -通道30V 0.019ohm - 40A采用D2PAK STripFET]功率MOSFET
From old datasheet system
N - CHANNEL 30V - 0.019 - 40A - D 2 PAK STripFET TM POWER MOSFET
N - CHANNEL 30V - 0.019ohm - 40A - D2PAK STripFET] POWER MOSFET
N - CHANNEL 30V - 0.019W - 40A - D 2 PAK STripFET POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| FDS6961AZ FDS6961AZL86Z FDS6961AZL99Z |
3.5 A, 30 V, 0.09 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET SO-8
TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 3.5A I(D) | SO
Dual N-Channel Logic Level PowerTrench MOSFET
|
Fairchild Semiconductor, Corp.
|
| STS17NF3LL 8678 |
N-CHANNEL 30V - 0.0045 ohm - 17A SO-8 STripFETII MOSFET FOR DC-DC CONVERSION
N-CHANNEL 30V - 0.0045 ohm - 17A SO-8 STripFET⑩ II MOSFET FOR DC-DC CONVERSION
From old datasheet system
N-CHANNEL PowerMESH MOSFET
N-CHANNEL 30V - 0.0045 ohm - 17A SO-8 STripFET II MOSFET FOR DC-DC CONVERSION
|
意法半导
STMicroelectronics
ST Microelectronics
|
| IRL3103L IRL3103S IRL3103STRR IRL3103STRL |
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=30V, Rds(on)=12mohm, Id=64A)
|
IRF[International Rectifier]
|
| FDMC8296 FDMC829610 |
30V N-Channel Power Trench MOSFET; Package: Power 33 (PQFN); No of Pins: 8; Container: Tape & Reel 12 A, 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Power Trench? MOSFET 30V, 18A, 8.0m
|
Fairchild Semiconductor, Corp.
|
| FX6ASH03 FX6ASH06 FX6VSH03 FX6KMH03 FX6SMH06 FX6UM |
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-252AA
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-252AA
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | SOT-186
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-247VAR
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-220AB
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | SOT-186
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 70A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-252AA 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 3A条（丁）|52AA
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 30A条（丁）|63AB
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 3A条（丁）|63AB
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 30A I(D) | SOT-186 晶体管| MOSFET的| P通道| 30V的五（巴西）直| 30A条（丁）|的SOT - 186
|
Renesas Electronics, Corp.
NXP Semiconductors N.V.
|
| STB80NE03L-06 STB80NE03L-06-1 STB80NE03L-06T4 |
N-CHANNEL 30V - 0.005ohm - 80A D2PAK / I2PAK STripFET?/a> POWER MOSFET
N-CHANNEL 30V - 0.005 OHM - 80A D2PAK/I2PAK STRIPFET POWER MOSFET
N-CHANNEL 30V - 0.005 OHM - 80A D2PAK/I2PAK STRIPFET POWER MOSFET
N-CHANNEL 30V - 0.005ohm - 80A D2PAK / I2PAK STripFET POWER MOSFET
N-CHANNEL 30V - 0.005ohm - 80A D2PAK / I2PAK STripFET⑩ POWER MOSFET
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PC01; No. of Contacts:6; Connector Shell Size:10; Connecting Termination:Solder; Circular Shell Style:Cable Receptacle; Body Style:Straight
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| SI4435DY SI4435DYTR |
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=-30V Rds(on)=0.020ohm
Power MOSFET(Vdss=-30V, Rds(on)=0.020ohm
Power MOSFET(Vdss=-30V/ Rds(on)=0.020ohm
SHROUD, PRIVACY; RoHS Compliant: Yes
|
IRF[International Rectifier]
|
