| PART |
Description |
Maker |
| MCO500-18IO1 MCO500 MCO500-12IO1 MCO500-14IO1 MCO5 |
1800V high power thyristor module
1600V high power thyristor module
1400V high power thyristor module
1200V high power thyristor module
High Power Thyristor Modules
|
IXYS[IXYS Corporation]
|
| BSM100GD120DN2 100D12N2 C67070-A2517-A67 |
From old datasheet system
IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BSM200GT120DN2 200T12N2 C67070-A2519-A67 |
IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) IGBT功率模块（焊电源模块3相全桥包括快速滑行二极管
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| C67076-A1053-A2 BSM191F |
SIMOPAC Module (Power module Single switch FREDFET N channel Enhancement mode) 28 A, 1000 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET
SIMOPAC ? Module
|
SIEMENS A G
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| AWT6114 |
The AWT6114 is a high power, high efficiency amplifier module for Korean Band PCS CDMA wireless handset applications.
Power Amplifiers
KPCS CDMA 3.4V/28dBm Linear Power Amplifier Module
|
Anadigics Inc
ANADIGICS, Inc
|
| BSM111AR C67076-S1013-A2 BSM111 |
SIMOPAC Module (Power module Single switch N channel Enhancement mode) 200 A, 100 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET
SIMOPAC Module (Power module Single switch N channel Enhancement mode) SIMOPAC模块（单开关电源模块N通道增强模式
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| CDL71240 CDL20840 CDL21440 CDL70140 CDL70240 |
PHOTOTHYRISTOR|PHOTO HALF-CONTROLLED NEGATIVE DOUBLER|1.2KV V(DRM)|MODULE-S
PHOTOTHYRISTOR|PHOTO HALF-CONTROLLED POSITIVE DOUBLER|800V V(DRM)|MODULE-S
PHOTOTHYRISTOR|PHOTO HALF-CONTROLLED POSITIVE DOUBLER|1.4KV V(DRM)|MODULE-S
PHOTOTHYRISTOR|PHOTO HALF-CONTROLLED NEGATIVE DOUBLER|100V V(DRM)|MODULE-S PHOTOTHYRISTOR |图片半控负倍增| 100V的五（DRM）的|模块
PHOTOTHYRISTOR|PHOTO HALF-CONTROLLED NEGATIVE DOUBLER|200V V(DRM)|MODULE-S PHOTOTHYRISTOR |图片半控负倍增| 200伏五（DRM）的|模块
|
Atmel, Corp.
|
| BSM75GD120DN2 075D12N2 C67070-A2516-A67 |
IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) 103 A, 1200 V, N-CHANNEL IGBT
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| S-AV40 |
RF POWER AMPLIFIER MODULE FM RF POWER AMPLIFIER MODULE FOR 30W COMMERCIAL VHF RADIO APPLICATIONS
|
Toshiba Semiconductor
|
| 6DI50B-050 6DI50B050 1DI200A140 2DI100A140 2DI30A1 |
TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | DARLINGTON | 600V V(BR)CEO | 15A I(C)
5-Pin, Multiple-Input, Programmable Reset ICs
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.4KV V(BR)CEO | 100A I(C)
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1.4KV V(BR)CEO | 200A I(C)
4-Wire Interfaced, 2.7V to 5.5V, 4-Digit 5 x 7 Matrix LED Display Driver
Bipolar Transistor Modules
|
Fuji Electric Co., Ltd.
|
