| PART |
Description |
Maker |
| BUV48A |
15 A, 450 V, NPN, Si, POWER TRANSISTOR
|
NXP SEMICONDUCTORS
|
| IRF420-423 IRF421 IRF422 IRF423 IRF822 MTP2N45 IRF |
N-Channel Power MOSFETs, 3.0 A, 450 V/500 V N沟道功率MOSFET.0甲，450 V/500 V
Circular Connector; Body Material:Plastic; Series:Trident TNM Series; Connector Shell Size:14; For Use With:Neptune Circular Connectors
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| MA02203AD-R7 MA02203AD MA02203AD-R13 |
3.6 V, 450 mW DECT RF Power Amplifier IC 3.6 V的，450毫瓦的DECT射频功率放大器IC
100mA Negative uCap LDO Regulator
3.6 V / 450 mW DECT RF Power Amplifier IC
|
NXP Semiconductors N.V.
MACOM[Tyco Electronics]
|
| SCVN0345N1 SJVN0345N1 SJVN0345N2 SXVN0345N1 SXVN03 |
2.5 A, 450 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
350 mA, 450 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39
|
Supertex, Inc.
|
| SFT3439S.22 |
1 A /450 Volts NPN Switching Transistor
|
Solid States Devices, Inc.
|
| AD5624 AD5624BRMZ-REEL7 AD5664BRMZ-REEL7 AD5624BCP |
2.7 V to 5.5 V, 450 μA, Rail-to-Rail Output, Quad, 12-Bit <span style="text-transform: lowercase"> <em>nano</span></em>DAC<sup>?</sup>
2.7 V to 5.5 V, 450 µA, Rail-to-Rail Output, Quad, 12-/16-Bit nanoDACs®
2.7 V to 5.5 V, 450 レA, Rail-to-Rail Output, Quad, 12-/16-Bit nanoDACs
2.7 V to 5.5 V, 450 μA, Rail-to-Rail Output, Quad, 12-/16-Bit nanoDACs
|
AD[Analog Devices]
|
| M67799 M67799HA |
450-470MHz / 9.6V / 7.5W / FM PORTABLE RADIO
RF POWER MODULE 450-470MHz, 9.6V, 7.5W, FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
|
| M57721 57721 |
450-512MHz 12.5V /7W /FM PORTABLE RADIO
450-512MHz 12.5V,7W,FM PORTABLE RADIO
450-512MHZ, 12.5V, 7W, FM MOBILE RADIO
From old datasheet system
|
Mitsubishi Electric Semiconductor
|
| APT10045B2LL APT10045LLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 1000V 23A 0.450 Ohm
|
Advanced Power Technology Ltd.
|
| APT10045JLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 1000V 21A 0.450 Ohm
|
Advanced Power Technology Ltd.
|
|
