PART |
Description |
Maker |
RJK0236DPA |
Built in SBD N Channel Power MOS FET
|
Renesas
|
RJK0213DPA-00-J5A RJK0213DPA13 |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK03E4DPA RJK03E4DPA13 RJK03E4DPA-00-J5A |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK03P9DPA-00-J5A |
Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK03R4DPA RJK03R4DPA-00-J5A |
Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK03N6DPA |
30V, 40A, 3.8m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
MCH5810 |
Pch SBD MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications
|
Sanyo Semicon Device
|
SCH2080KE |
N-channel SiC power MOSFET co-packaged with SiC-SBD
|
Rohm
|
MM1035XF |
System Reset (with built-in watchdog timer) Monolithic IC 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8
|
MITSUMI ELECTRIC CO., LTD.
|
MM1096BD MM1096BS MM1096B MM1096BF MM1096AF MM1096 |
System Reset (with built-in watchdog timer) Monolithic MM1096 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PSIP8
|
MITSUMI ELECTRIC CO., LTD. Mitsumi Electronics, Corp.
|
STA406 STA406A |
NPN Darlington With built-in avalanche diode 6 A, 70 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
|
SANKEN[Sanken electric]
|