| PART |
Description |
Maker |
| BAT29-AR2 BAT29-AZX |
SILICON, UHF BAND, MIXER DIODE, DO-35
|
STMICROELECTRONICS
|
| BAT17 |
SILICON, UHF BAND, MIXER DIODE
|
GENERAL SEMICONDUCTOR INC
|
| BA128210 BA1283-TR3 |
Band Switching Diodes
DIODE SILICON, VHF BAND, MIXER DIODE, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS, MICROMELF-2, Microwave Mixer Diode
|
Vishay Siliconix
Vishay Semiconductors
|
| 1SS29501 1SS295 |
DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE UHF BAND MIXER APPLICATIONS
|
Toshiba Semiconductor
|
| 1SS154 |
Diode Silicon Epitaxial Schottky Barrier Type UHF~S Band Mixer/Detector Applications
|
TOSHIBA
|
| MBD110DWT1 |
Dual Schottky Barrier Diodes(双肖特基势垒二极 SILICON, VHF-UHF BAND, MIXER DIODE
|
ON Semiconductor
|
| ABP9001-868 ABP9002-806 ABP9002-700 ABM3001-868 AB |
SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE
SILICON, MEDIUM BARRIER SCHOTTKY, S BAND, MIXER DIODE
SILICON, HIGH BARRIER SCHOTTKY, S BAND, MIXER DIODE
SILICON, HIGH BARRIER SCHOTTKY, X BAND, MIXER DIODE
SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE
|
Vishay Beyschlag
Advanced Semiconductor, Inc.
ADVANCED SEMICONDUCTOR INC
|
| 1SS315 |
RES 36.0 OHM 1/20W 1% 0201 SMD
DIODE (UHF BAND MIXER APPLICATIONS)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 1N23WG ASI1N23WG |
SILICON MIXER DIODE SILICON, X-KU BAND, MIXER DIODE, DO-23
From old datasheet system
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| 1N53 |
SILICON MIXER DIODE SILICON, KA BAND, MIXER DIODE, DO-36
From old datasheet system
|
Advanced Semiconductor, Inc.
|
|
