PART |
Description |
Maker |
BA128210 BA1283-TR3 |
Band Switching Diodes DIODE SILICON, VHF BAND, MIXER DIODE, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS, MICROMELF-2, Microwave Mixer Diode
|
Vishay Siliconix Vishay Semiconductors
|
DA6X103T |
SILICON, VHF BAND, MIXER DIODE
|
PANASONIC CORP
|
MA4X796 |
Silicon epitaxial planar type SILICON, VHF BAND, MIXER DIODE
|
Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
|
CDB7619-000 |
SILICON, LOW BARRIER SCHOTTKY, VHF-mm WAVE BAND, MIXER DIODE
|
SKYWORKS SOLUTIONS INC
|
HSMS-8202 HSMS-8202-BLK HSMS-8202-TR1 HSMS-8202-TR |
Surface Mount Microwave Schottky Mixer Diodes HSMS-8101 · X-band mixer diode HSMS-8202 · X-band mixer diode HSMS-8207 · X-band mixer diode HSMS-8209 · X-band mixer diode
|
http:// HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
|
BB639C Q62702-B695 |
Silicon Variable Capacitance Diode (For tuning of extended frequency band in VHF TV / VTR tuners) VHF BAND, 39 pF, 35 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Johanson Dielectrics, Inc. SIEMENS AG Infineon Siemens Group SIEMENS[Siemens Semiconductor Group]
|
5082-2351 50822351 |
MEDIUM BARRIER SCHOTTKY DIODE SILICON, MEDIUM BARRIER SCHOTTKY, VHF-UHF BAND, MIXER DIODE From old datasheet system
|
Advanced Semiconductor, Inc.
|
MMBD452LT1G |
Dual Hot−Carrier Diodes Schottky Barrier Diodes SILICON, LOW BARRIER SCHOTTKY, VHF-UHF BAND, MIXER DIODE, TO-236AB
|
ON Semiconductor
|
DMJ4771-000 DME2029-000 DME2031-000 DME2029-255 DM |
SILICON, HIGH BARRIER SCHOTTKY, KU BAND, MIXER DIODE SILICON, MEDIUM BARRIER SCHOTTKY, S BAND, MIXER DIODE SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE
|
|
ADN9001-91 AMM9001-91 ADN3002-23 ADN3002-51 ADN300 |
SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE SILICON, LOW BARRIER SCHOTTKY, S BAND, MIXER DIODE SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE SILICON, LOW BARRIER SCHOTTKY, KA BAND, MIXER DIODE
|
ADVANCED SEMICONDUCTOR INC
|
AHV9501-15 AHV950115 |
SILICON VARACTOR DIODE HF-VHF BAND, 200 pF, 22 V, SILICON, VARIABLE CAPACITANCE DIODE From old datasheet system
|
Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
|
KDV273 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF/VHF BAND)
|
KEC(Korea Electronics)
|
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