PART |
Description |
Maker |
UPD45256163G5-A80L-9JF UPD45256441G5-A80-9JF UPD45 |
16M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 64M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54 32M X 8 SYNCHRONOUS DRAM, 7 ns, PDSO54
|
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V54C3256164VDUF6I V54C3256404VDUT7I V54C3256164VDU |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60 64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
PROMOS TECHNOLOGIES INC
|
M2V64S20BTP-8A M2V64S30BTP-8A M2V64S40BTP-8A |
64M bit Synchronous DRAM
|
Mitsubishi Electric Corporation
|
HY57V12820LT-P |
64M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
|
HYNIX SEMICONDUCTOR INC
|
HYM72V64756AT8-8 HYM72V64756AT8-S |
64M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
|
HYNIX SEMICONDUCTOR INC
|
UPD4564841G5 UPD4564441 UPD4564163 UPD4564163G5 UP |
64M-bit Synchronous DRAM 4-bank, LVTTL
|
ELPIDA[Elpida Memory]
|
EDS5108ABTA-6B EDS5108ABTA-7A |
512M bits SDRAM 64M X 8 SYNCHRONOUS DRAM, 5 ns, PDSO54 512M bits SDRAM 64M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Elpida Memory, Inc.
|
M5M4V64S40ATP-8A M5M4V64S40ATP-10 A98009_A M5M4V64 |
From old datasheet system 64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M2V64S50ETP-I |
64M Single Data Rate Synchronous DRAM WTR (Wide Temperature Range)
|
Elpida Memory
|
IS42SM81600E IS42SM16800E-6BLI IS42RM81600E-7TL IS |
128Mb Mobile Synchronous DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Integrated Silicon Solution, Inc INTEGRATED SILICON SOLUTION INC
|
MC-4R128CPE6C-653 MC-4R128CPE6C-745 MC-4R128CPE6C- |
64M X 16 DIRECT RAMBUS DRAM MODULE, 1.5 ns, DMA184 Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 16-BIT) Direct Rambus垄芒 DRAM RIMM垄芒 Module 128M-BYTE (64M-WORD x 16-BIT)
|
ELPIDA MEMORY INC
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