PART |
Description |
Maker |
BA582E6327 |
SILICON, VHF BAND, MIXER DIODE
|
INFINEON TECHNOLOGIES AG
|
BA482AMO BA484AMO BA483AMO |
SILICON, VHF BAND, MIXER DIODE, DO-34
|
NXP Semiconductors N.V.
|
MBD110DWT1 |
Dual Schottky Barrier Diodes(双肖特基势垒二极 SILICON, VHF-UHF BAND, MIXER DIODE
|
ON Semiconductor
|
HSMS-8202 HSMS-8202-BLK HSMS-8202-TR1 HSMS-8202-TR |
Surface Mount Microwave Schottky Mixer Diodes HSMS-8101 · X-band mixer diode HSMS-8202 · X-band mixer diode HSMS-8207 · X-band mixer diode HSMS-8209 · X-band mixer diode
|
http:// HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
|
BB731S BB731 |
From old datasheet system Silicon epitaxial planar capacitance diodes with very wide effective capacitance variation for tuning the VHF range 41 ... 170 MHz in hyperband televi DIODE VHF BAND, 50 pF, 32 V, SILICON, VARIABLE CAPACITANCE DIODE, PLASTIC PACKAGE-2, Variable Capacitance Diode
|
Vishay Intertechnology,Inc. VISAY[Vishay Siliconix] Vishay Semiconductors
|
DME3019-325-008 DME3013-131-012 DMJ3107-364-008 DM |
SILICON, MEDIUM BARRIER SCHOTTKY, S BAND, MIXER DIODE SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE SILICON, HIGH BARRIER SCHOTTKY, KU BAND, MIXER DIODE SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE SILICON, MEDIUM BARRIER SCHOTTKY, K BAND, MIXER DIODE SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE SILICON, LOW BARRIER SCHOTTKY, S BAND, MIXER DIODE
|
SKYWORKS SOLUTIONS INC
|
HSMS-8202-TR2G HSMS-8209-TR2G HSMS-8202-BLKG |
SILICON, KU BAND, MIXER DIODE Surface Mount Microwave Schottky Mixer Diodes
|
AVAGO TECHNOLOGIES LIMITED
|
1N53 |
SILICON MIXER DIODE SILICON, KA BAND, MIXER DIODE, DO-36 From old datasheet system
|
Advanced Semiconductor, Inc.
|
BAT14-03 BAT14-03W Q62702-A1103 BAT1403W |
Silicon Schottky Diode (DBS mixer application to 12GHz Medium barrier type Low capacitance) SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
GC9943-S12-127A GC9943-S12-129A GC9941-TCC-127B GC |
SILICON, HIGH BARRIER SCHOTTKY, C BAND, MIXER DIODE SILICON, HIGH BARRIER SCHOTTKY, KU-K BAND, MIXER DIODE SILICON, LOW BARRIER SCHOTTKY, C BAND, MIXER DIODE SILICON, LOW BARRIER SCHOTTKY, KU-K BAND, MIXER DIODE SILICON, LOW BARRIER SCHOTTKY, S BAND, MIXER DIODE
|
MICROSEMI CORP-LOWELL
|
KDV275 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF/VHF BAND)
|
KEC[KEC(Korea Electronics)]
|
KDV258 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF/VHF BAND)
|
KEC(Korea Electronics)
|
|