| PART |
Description |
Maker |
| RJK0455DPB RJK0455DPB13 RJK0455DPB-00-J5 |
40V, 45A, 3.8m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| M5M5T5636UG-20 M5M5T5636UG-25 M5M5T5636UG-22 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
RECTIFIER SCHOTTKY SINGLE 1A 40V 45A-Ifsm 0.53Vf 0.1A-IR SMB 3K/REEL
|
Mitsubishi Electric Corporation
|
| RJK0456DPB RJK0456DPB13 RJK0456DPB-00-J5 |
40V, 50A, 3.2m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| SBA100-04Y SBA100-04YSMP-FD |
10 A, 40 V, SILICON, RECTIFIER DIODE SMP-FD, 3 PIN
Schottky Barrier Diode (Twin Type Cathode Common) 40V, 10A Rectifier
40V 10A Rectifier
40V/ 10A Rectifier
|
SANYO Semiconductor Co., Ltd.
SANYO[Sanyo Semicon Device]
|
| T308N2000TOF |
2.0kV V[drm] Max., 308A I[T] Max. Silicon Controlled Rectifier
|
Telefunken Electronic
|
| STR-BS6301 STRS6301 STR-S6301 |
Low Leakage Diodes; Package: PG-SOT23-3; Configuration: Dual; VR (max): 80.0 V; IF (max): 200.0 mA; IR (max): 5.0 nA; trr (max): 1,500.0 ns;
SWITCHING REGULATOR HYRRTD lC
|
Sanken Electric Co.,Ltd.
|
| BAS40DW-04 BAS40DW-05-TP BAS40DW-06-TP BAS40TW BAS |
200mW SCHOTTKY BARRIER Diode
DIODE SCHOTTKY 200MW 40V SOT363 0.2 A, 40 V, 4 ELEMENT, SILICON, SIGNAL DIODE
DIODE SCHOTTKY ARRAY 40V SOT-363 0.2 A, 40 V, 3 ELEMENT, SILICON, SIGNAL DIODE
|
Micro Commercial Components, Corp.
|
| CDBV3-00340S-G CDBV3-00340A-G |
Small Signal Schottky Diodes, V-RRM=40V, V-R=40V, I-O=30mA
|
Comchip Technology
|
| CDBA5819-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=40V, V-R=40V, I-O=1A
|
Comchip Technology
|
| CDBU0340 |
Small Signal Schottky Diodes, V-RRM=40V, V-R=40V, I-O=350mA
|
Comchip Technology
|
| ZXT12P40DX06 ZXT12P40DXTA ZXT12P40DX |
SuperSOT4⑩ DUAL 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
SuperSOT4 DUAL 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
|
Zetex Semiconductors
Diodes Incorporated
|
