| PART |
Description |
Maker |
| RJK0853DPB13 RJK0853DPB-00-J5 RJK0853DPB-15 |
80V, 40A, 8.0m max. Silicon N Channel Power MOS FET Power Switching
80V, 40A, 8.0m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| TDA4665T TDA4665 |
DIODE SCHOTTKY 40V 40A TO247AC
Baseband delay line
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| RJK0451DPB-00-J5 RJK0451DPB13 |
40V, 35A, 7.0m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| PA52 |
Amplifiers - Apex Linear Op-Amp, 200V, 40A OP-AMP, 10000 uV OFFSET-MAX, 3 MHz BAND WIDTH, MDFM12
|
Cirrus Logic, Inc.
|
| HT1000/08OJ6 |
800V V[drm] Max., 980A I[T] Max. Silicon Controlled Rectifier
|
Herrmann
|
| STP3015L STB3015 STB3015L 6057 |
From old datasheet system
N - CHANNEL 30V - 0.013 - 40A - D 2 PAK/TO-220 STripFET TM POWER MOSFET
N - CHANNEL 30V - 0.013 ohm - 40A - D2PAK/TO-220 STripFETO POWER MOSFET -通道30V 0.013欧姆- 40A D2PAK/TO-220 STripFETO的功率MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| STR-BS6301 STRS6301 STR-S6301 |
Low Leakage Diodes; Package: PG-SOT23-3; Configuration: Dual; VR (max): 80.0 V; IF (max): 200.0 mA; IR (max): 5.0 nA; trr (max): 1,500.0 ns;
SWITCHING REGULATOR HYRRTD lC
|
Sanken Electric Co.,Ltd.
|
| SBA160-04Y |
Schottky Barrier Diode (Twin Type Cathode Common) 40V, 16A Rectifier
40V, 16A Rectifier(用于高频整流应用的重复反向电0V，平均整流电6A 整流
40V/ 16A Rectifier
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| CDBUR40 |
Small Signal Schottky Diodes, V-RRM=40V, V-R=40V, I-O=200mA
|
Comchip Technology
|
