| PART |
Description |
Maker |
| NTY100N10 NTY100N10G NTY100N1006 |
Power MOSFET 123 A, 100 V N−Channel Enhancement−Mode TO264 Package
|
ON Semiconductor
|
| MBR0540T1 MBR0540T1G MBR0540T3 MBR0540T3G |
Surface Mount Schottky Power Rectifier SOD−123 Power Surface Mount Package 0.5 A, 40 V, SILICON, SIGNAL DIODE
From old datasheet system
Surface Mount Schottky Power Rectifier SOD−123 Power Surface Mount Package
0.5A 40V Schottky Rectifier
|
Rectron Semiconductor
ONSEMI[ON Semiconductor]
|
| IMP525 |
Sing Single Cell Batt le Cell Batterery Powered Electroluminescent Lamp Driv er/Inverter(单节电池供电的电致发光（EL）灯驱动反相
|
IMP
|
| MBR0520LNF065 MBR0520LF065 |
0.5 Ampere Schottky Power Rectifiers; Package: SOD-123; No of Pins: 2; Container: Tape & Reel 0.5 A, 20 V, SILICON, SIGNAL DIODE
|
Fairchild Semiconductor, Corp.
|
| IRFBL10N60A |
N-Channel SMPS MOSFET(N娌?? 寮??妯″??垫?MOS?烘?搴??,?ㄤ?楂????C-DC杞????
HEXFET Power MOSFET
HEXFET? Power MOSFET
11 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR
|
IRF[International Rectifier]
VISHAY SILICONIX
|
| K4D263238A K4D263238A-GC33 K4D263238A-GC36 K4D2632 |
DIODE ZENER SINGLE 500mW 3.9Vz 0.05mA-Izt 0.05 5uA-Ir 2 SOD-123 3K/REEL
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 100万x 32Bit的4银行双数据速率同步DRAM的双向数据选通和DLL
DIODE ZENER SINGLE 500mW 3.3Vz 0.05mA-Izt 0.05 7.5uA-Ir 1.5 SOD-123 3K/REEL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| AUIRF1404Z AUIRF1404ZL AUIRF1404ZS |
HEXFET垄莽 Power MOSFET
HEXFET? Power MOSFET
160 A, 40 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
Low On-Resistance
|
International Rectifier
List of Unclassifed Man...
|
| IRF1404SPBF IRF1404LPBF IRF1404STRLPBF IRF1404SPBF |
HEXFET垄莽 Power MOSFET
HEXFET? Power MOSFET
75 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
Advanced Process Technology
|
International Rectifier
|
| JE10 JE1046ZTL2R JE10112HL1 JE10112HL1R JE10112HL2 |
Ceramic Chip Capacitors to MIL-PRF-123; Capacitance: 1.1pF; Voltage: 100V; Tolerance: ±0.25pF; TC: BP; Chip Size: SMD-1206; Termination: Nickel Guarded, Solder Coated (Sn60)
Ceramic Chip Capacitors to MIL-PRF-123; Capacitance: 10pF; Voltage: 100V; Tolerance: ±10%; TC: BP; Chip Size: SMD-1206; Termination: Nickel Guarded, Solder Coated (Sn60)
Ceramic Chip Capacitors to MIL-PRF-123; Capacitance: 10pF; Voltage: 100V; Tolerance: ±10%; TC: BP; Chip Size: SMD-0805; Termination: Nickel Guarded, Solder Coated (Sn60)
Ceramic Chip Capacitors to MIL-PRF-123; Capacitance: 100pF; Voltage: 100V; Tolerance: ±5%; TC: BP; Chip Size: SMD-0805; Termination: Nickel Guarded, Solder Coated (Sn60)
Ceramic Chip Capacitors to MIL-PRF-123; Capacitance: 100pF; Voltage: 100V; Tolerance: ±5%; TC: BP; Chip Size: SMD-1206; Termination: Nickel Guarded, Solder Coated (Sn60)
Ceramic Chip Capacitors to MIL-PRF-123; Capacitance: 100pF; Voltage: 50V; Tolerance: ±1%; TC: BP; Chip Size: SMD-0805; Termination: Nickel Guarded, Solder Coated (Sn60)
Ceramic Chip Capacitors to MIL-PRF-123; Capacitance: 100pF; Voltage: 50V; Tolerance: ±10%; TC: BP; Chip Size: SMD-0805; Termination: Nickel Guarded, Solder Coated (Sn60)
MINIATURE HIGH POWER LATCHING RELAY 微型大功率磁保持继电
Ceramic Chip Capacitors to MIL-PRF-123; Capacitance: 1.2pF; Voltage: 50V; Tolerance: ±0.25pF; TC: BP; Chip Size: SMD-0805; Termination: Nickel Guarded, Solder Coated (Sn60) 微型大功率磁保持继电
Ceramic Chip Capacitors to MIL-PRF-123; Capacitance: 10pF; Voltage: 100V; Tolerance: ±5%; TC: BP; Chip Size: SMD-0805; Termination: Nickel Guarded, Solder Coated (Sn60) 微型大功率磁保持继电
Ceramic Chip Capacitors to MIL-PRF-123; Capacitance: 100pF; Voltage: 100V; Tolerance: ±10%; TC: BP; Chip Size: SMD-1206; Termination: Nickel Guarded, Solder Coated (Sn60) 微型大功率磁保持继电
MINIATURE HIGH POWER LATCHING RELAY
|
HONGFA[Hongfa Technology]
厦门宏发电声股份有限公司
Xiamen Hongfa Electroacoustic Co., Ltd.
???瀹???靛０?′唤??????
|
| AM29LV010B-45RJC AM29LV010B-55JC AM29LV010B-55JE A |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET ST Package
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
80V Single N-Channel HEXFET Power MOSFET in a SO-8 package
-40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
20V Dual N-Bidirectional HEXFET Power MOSFET in a 6-Lead FlipFET
30V N-Channel PowerTrench MOSFET 30VN沟道的PowerTrench MOSFET
-12V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package x8闪存EEPROM
1 Mb (128K x 8) Uniform Sector, Flash Memory 128K X 8 FLASH 3V PROM, 70 ns, PQCC32
x8 Flash EEPROM x8闪存EEPROM
|
Toshiba, Corp.
Advanced Micro Devices, Inc.
Spansion, Inc.
|
| MAX626-TSC428 TSC426CBA TSC426CPA TSC426MJA TSC427 |
Dual Power MOSFET Driver 双电源MOSFET驱动
QUADRUPLE 2-INPUT EXCLUSIVE-OR GATES 20-LCCC -55 to 125
30V N-Channel PowerTrench MOSFET
Dual Power MOSFET Drivers
Dual-Power MOSFET Drivers
|
Maxim Integrated Produc...
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
Maixm
MAXIM - Dallas Semiconductor
|
