PART |
Description |
Maker |
IDH04G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDW10G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDH06G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDW40G65C5 IDW10G65C5 IDW12G65C5 IDW16G65C5 IDW20G |
650V SiC thinQ! Generation 5 diodes 650V SiC thinQ!?Generation 5 diodes
|
Infineon Technologies AG Infineon Technologies A...
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GNT60 GNT60-12 GNT60-15 GNT60-18 GNT60-24 GNT60-48 |
GNT60-X-YYYG, where X = 12, 15, 18, 24 or 48 which represents the output voltage rating, -YYY is value added options not related to Safety and G represents ROHS Compliance
|
SL Power Electronics
|
IDH02SG120 |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
IDH04SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
IDH10SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
IDT08BS60C IDT08S60C |
2nd Generation thinQ SiC Schottky Diode 2nd Generation thinQ! SiC Schottky Diode
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Infineon Technologies A... Infineon Technologies AG
|
IDT04BS60C IDT04S60C |
2nd Generation thinQ SiC Schottky Diode 2nd Generation thinQ! SiC Schottky Diode
|
Infineon Technologies A... Infineon Technologies AG
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