| PART |
Description |
Maker |
| FT2232D |
Future Technology Devices International Ltd
|
List of Unclassifed Manufacturers
|
| FT232RL |
Future Technology Devices International Ltd.
|
List of Unclassifed Manufacturers
|
| FT51A-EVM |
Future Technology Devices International Datasheet
|
List of Unclassifed Man...
|
| UPC8232T5N UPC8232T5N-E2 |
B IPOLAR ANALOG INTE GR ATE D CIR CUIT
|
California Eastern Laboratories
|
| 2FB-60-F |
FUTURE BUS CONNECTOR
|
Adam Technologies, Inc.
|
| EP1AGX35CF1152I6N EP1AGX35DF1152C6N |
The ArriaTM GX family of devices combines 3.125 gigabits per second (Gbps) serial transceivers with reliable packaging technology
FPGA, 33520 CLBS, PBGA1152 35 X 35 MM, 1 MM PITCH, BGA-1152
|
Altera Corporation
Altera, Corp.
|
| 2FB-48-M |
FUTURE BUS 48 POSITION STRAIGHT MALE
|
Adam Technologies, Inc.
|
| RKEF090 RKEF300 RKEF250 BBRF550 BBRF5501 RKEF500 R |
PolySwitch Resettable Devices Radial-leaded Devices
Overcurrent Protection Device
|
Tyco Electronics
http://
|
| EPC1 |
Configuration Devices for ACEX, APEX, FLEX & Mercury Devices
|
Altera Corporation
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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CREE POWER
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