| PART |
Description |
Maker |
| MT6L61AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| MT6C04AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| 2SK3475 |
Field Effect Transistor Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications
VHF-and UHF-band Amplifier Applications
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| KDV154 KDV154A KDV154B |
TV VHF, UHF tuner AFC VCO for UHF band radio
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TV VHF,UHF TUNER AFC VCO FOR UHF BAND RADIO)
|
Korea Electronics (KEC)
KEC(Korea Electronics)
|
| EC3H03B |
VHF to UHF Wide-Band Low-Noise Amplifier and OSC Applications 甚高频到超高频宽带低噪声放大器和OSC应用
NPN Epitaxial Planar Type Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier and OSC Applications
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
|
| 2SC5088 |
NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOESE AMPLIFIER APPLICATIONS)
VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 1N5712-AR1 |
SILICON, VHF-UHF BAND, MIXER DIODE, DO-35
|
STMICROELECTRONICS
|
| JDP2S01E JDP2501E |
SILICON, PIN DIODE
UHF~VHF BAND RF ATTENUATOR APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| 1N5686B 1N5690A |
VHF-UHF BAND, 18 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 39 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
|
| 2SC5757 2SC5757WE-TR-E |
Silicon NPN Epitaxial VHF/UHF wide band amplifier
|
http://
Renesas Electronics Corporation
|
| ZC703 ZC703C |
VHF-UHF BAND, 12 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
|
