| PART |
Description |
Maker |
| TMP47P202VP TMP47P202VM |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.90; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 的CMOS 4位微控制
|
Toshiba Corporation
Toshiba, Corp.
|
| TMP86C420FG |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 22.93 to 25.57; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
|
Toshiba Corporation
|
| TMP86C408NG |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 22.23 to 23.17; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
|
Toshiba Corporation
|
| TMP86C846NG |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 3.70 to 4.10; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 8位微控制
|
Toshiba, Corp.
|
| TMP86CH29BUG |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 4.42 to 4.90; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 8位微控制
|
Toshiba, Corp.
|
| TMP47C103M |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 4.84 to 5.04; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 的CMOS 4位MICROCON
|
Toshiba, Corp.
|
| TLYU267 TLYU267F |
Panel Circuit Indicator
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.35 to 17.09; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
|
Toshiba Semiconductor
Toshiba Corporation
|
| HVD369B |
Super small Flat Package (SFP) is suitable for surface mount design
|
TY Semiconductor Co., Ltd
|
| SKDH116-L75 SKDH116_12-L75 SKDH116_16-L75 SKDH116/ |
三相整流桥IGBT的制动斩波器
MOSFET; ID (A): 0.03; VDS (V): 6; Pch : 0.15; |yfs| (S) typ: 0.029; PG (dB) typ: 22; Ciss (pF) typ: 2.1; NF (dB) typ: 1.75; IDSS (mA): -; Package: MPAK-4
3-Phase Bridge Rectifier IGBT braking chopper
|
Semikron International
|
| STP3NA100 STP3NA100FP |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN 老产品：不适合用于新设计中
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
|
ST Microelectronics
|
| BD12TD2WNVX-TL BD18TD2WNVX-TL BD19TD2WNVX-TL BD25T |
FIXED POSITIVE LDO REGULATOR, PDSO4
Ultra Small Package CMOS LDO Regulators suitable for High-density Mounting
|
http://
Rohm
|
| DF2S12S DF3A6.2FE |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.15 to 9.55; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 产品使用，但对静电放电（ESD）保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.45 to 10.55; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
