| PART |
Description |
Maker |
| 1N74 1N60D 1N68A 1N96A 1N72 1N73 1N93 1N63 1N61 1N |
Diode Switching 100V 10A 2-Pin
Diode Switching 50V 3A 2-Pin Case A
GOLD BOUNDED GERMANUM DIODE
Diode Small Signal Switching 75V 0.3A Automotive 2-Pin DO-35 T/R
Diode Switching 125V 0.0003A 2-Pin DO-35
Diode Switching 50V 0.005A 2-Pin Case H
GOLD BONDED GERMANIUM DIODES
|
New Jersey Semiconductor
|
| KDS135 |
Switching Diode
SILICON EPITAXIAL PLANAR DIODE (HIGH VOLTAGE SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| BYW52-TR BYW54-TR BYW54-TAP |
DIODE 2 A, 200 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode
AVALANCHE DIODE SOD57 STD-E2
Diode Switching 600V 2A 2-Pin SOD-57 Ammo
|
Vishay Semiconductors
|
| MMBD7000LT1 ON2085 |
Dual Switching Diode
DUAI SWITCHING DIODE
From old datasheet system
|
MOTOROLA INC
ON Semi
MOTOROLA[Motorola, Inc]
|
| M1MA142WKT1 M1MA141WK M1MA141WKT1 ON0326 M1MA141WK |
From old datasheet system
SC-70/SOT-323 PACKAGE COMMON CATHODE DUAL SWITCHING DIODE 40/80 V-100 mA SURFACE MOUNT
COMMON CATHODE DUAL SWITCHING DIODE 0.1 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
Motorola Inc
|
| 1N4148 |
SMALL SIGNAL SWITCHING DIODE
Fast Switching Diode
|
Chenyi Electronics
Comchip Technology
|
| BAS521LP-7B BAS521LP-7 |
Discrete - Diodes (Less than 0.5A) - Switching Diodes
0.4 A, 325 V, SILICON, SIGNAL DIODE
HIGH VOLTAGE SWITCHING DIODE
|
Diodes Incorporated
|
| CMPD7000E |
SMD Switching Diode Dual: In Series
ENHANCED SPECIFICATION SURFACE MOUNT DUAL, SILICON SWITCHING DIODE SERIES CONNECTION
|
Central Semiconductor Corp
|
| 70HFL100 70HFLR100S05 70HFLR10S02 70HFL40 |
Diode Switching 100V 70A 2-Pin DO-5
Diode Switching 1KV 70A 2-Pin DO-5
Diode Switching 400V 70A 2-Pin DO-5
|
New Jersey Semiconductor
|
| DCA01006 DCA010-TB-E |
Very High-Speed Switching Diode
Silicon Epitaxial Planar Type (Anode Common) Very High-Speed Switching Diode
|
Sanyo Semicon Device
|
| 1N4150-1 JANTXV1N4150-1 |
Signal or Computer Diode; Package: DO-35; IO (A): 0.2; Cj (pF): 2.5; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.74; IR (µA): 0.1; 0.2 A, 50 V, SILICON, SIGNAL DIODE, DO-35
SWITCHING DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
