| PART |
Description |
Maker |
| MSK130 |
ULTRA HIGH VOLTAGE HIGH SPEED DIFFERENTIAL OP-AMP
Ultra High Voltage High Speed Differential Operational Amplifier(FET输入，超高电压高速差分运算放大器)
|
List of Unclassifed Manufacturers
M.S. Kennedy Corporation
|
| 2SK2349 1034 |
N-Channel Silicon MOSFET High-Voltage, High-Speed Switching Applications
From old datasheet system
High-Voltage/ High-Speed Switching Applications
|
Sanyo Semicon Device
|
| MSK613-15 MSK613H |
Ultra Low Quiescent Current - ±10mA for High Voltage
HIGH VOLTAGE/HIGH SPEED SURFACE MOUNT AMPLIFIER
|
M.S. Kennedy Corporatio...
Anaren Microwave
|
| FJP5027 FJP5027TU FJP5027R FJP5027RTU |
Wide SOA
High Speed Switching
High Voltage and High Reliability
NPN Silicon Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| KTC4527 |
TRIPLE DIFFUSED NPN TRANSISTOR (HIGH VOLTAGE AND HIGH RELLABILITY HIGH SPEED SWITCHING, WIDE SOA)
|
KEC Holdings
KEC[KEC(Korea Electronics)]
|
| FJP5021NBSP FJP5021 FJP5021Y FJP5021RTU FJP5021RVT |
NPN Silicon Transistor
High Voltage and High Reliability
From old datasheet system
High Speed Switching : tF = 0.1μs (Typ.)
|
FAIRCHILD[Fairchild Semiconductor]
|
| FAN7081MXGF085 FAN7081GF085 FAN7081MGF085 |
The FAN7081_GF085 is a high-side gate drive IC designed for high voltage and high speed driving of MOSFET or IGBT, which operate up to 600V.
|
Fairchild Semiconductor
|
| 2SC3724 |
HIGH VOLTAGE, HIGH SPEED SWITCHING
From old datasheet system
HIGH VOLTAGE / HIGH SPEED SWITCHING
|
Unknow
List of Unclassifed Manufacturers
ETC
|
| 2SC2616 |
HIGH VOLTAGE, HIGH SPEED AND HIGH POWER SWITCHING
|
Unknow
ETC[ETC]
List of Unclassifed Manufacturers
|
| MJE13003 13003BR |
GT 37C 37#16 SKT RECP 三重扩散NPN晶体管（开关稳压器，高压和高速开关）
TRIPLE DIFFUSED NPN TRANSISTOR(SWITCHING REGULATOR / HIGH VOLTAGE AND HIGH SPEED SWITCHING)
TRIPLE DIFFUSED NPN TRANSISTOR(SWITCHING REGULATOR, HIGH VOLTAGE AND HIGH SPEED SWITCHING)
|
KEC(Korea)
KEC Holdings
KEC[KEC(Korea Electronics)]
|
| IRS2332JTRPBF IRS2330D |
High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us.
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us.
|
International Rectifier
|
