| PART |
Description |
Maker |
| 2SK3365 |
Super low on-state resistance: RDS(on)1 = 14 m MAX. (VGS = 10 V, ID = 15 A)
|
TY Semiconductor Co., Ltd
|
| 2SK3510 |
Super low on-state resistance: RDS(on) = 8.5 m MAX Built-in gate protection diode
|
TY Semiconductor Co., Ltd
|
| 2SK3511 |
Super low on-state resistance: RDS(on) = 12.5 m MAX Built-in gate protection diode
|
TY Semiconductor Co., Ltd
|
| MMD-04AB |
Super low resistance
|
MAG LAYERS
|
| R1173H101B R1173H101D R1173H091B R1173H091D R1173H |
Super low on resistance/Low voltage LDO
|
RICOH electronics devices division
|
| 2SK3105 |
4 V power source Low on-state resistance
|
TY Semiconductor Co., Ltd
|
| UPA2690T1R |
COMPLEMENTARY MOSFET Low on-state resistance
|
Renesas Electronics Corporation
|
| 2SK3405 |
4.5-V drive available Low on-state resistance RDS( = 9.0m MAX. (VGS = 10 V, ID = 24 A)
|
TY Semiconductor Co., Ltd
|
| KUK7607-55B |
Very low on-state resistance Q101 compliant Standard level compatible.
|
TY Semiconductor Co., Ltd
|
| 2SK3640 |
Low on-state resistance RDS(on)1 = 21 m MAX. Built-in gate protection diode
|
TY Semiconductor Co., Ltd
|
| KHP45N03LT |
Low on-state resistance Fast switching. Drain-Source Voltage VDS 30 V
|
TY Semiconductor Co., Ltd
|
| 2SK3294 |
Gate voltage rating -30 V Low on-state resistance RDS(on) = 160 m MAX. (VGS = 10 V, ID = 10 A)
|
TY Semiconductor Co., Ltd
|
