| PART |
Description |
Maker |
| SCS210AM |
Switching loss reduced, enabling high-speed switching . (2-pin package)
SiC Schottky Barrier Diodes
|
ROHM
ROHM Co., Ltd.
|
| VS-HFA50PA60CHN3 |
Reduced power loss in diode and switching transistor
|
Vishay Siliconix
|
| SI4860DY |
N-Channel MOSFET, 30V(D-S) , Reduced Qg, Fast-Switching N沟道MOSFET0V（D-S），Qg，快速开
N-Channel Reduced Qg, Fast Switching MOSFE
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| SI9801DY |
N/P-Channel 20-V (D-S) Pair
N-/P-Channel, Reduced Qg, Fast Switching Half-Bridge
N-/P-Channel/ Reduced Qg/ Fast Switching Half-Bridge
|
VISAY[Vishay Siliconix]
|
| SI4888DY |
N-Channel Reduced Qg/ Fast Switching MOSFET
N-Channel Reduced Qg, Fast Switching MOSFET
N-Channel Reduced Qg Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
| SI4888DY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
| SI4800BDY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay
|
| SI6801DQ |
N-and P-Channel, Reduced Qg, Fast Switching MOSFET
|
Vishay
|
| SI4890DY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
| SI4362BDY |
N-Channel 30-V (D-S) Reduced Qgd, Fast Switching WFET
|
Vaishali Semiconductor
|
| DVJR2225-LF DVJR1.050-LF DVJR4.735-LF DVJR4.750-LF |
SURFACE MOUNT ELECTROLYTIC 105C REDUCED SIZE DVJR
ELECTROLYTIC 105°C REDUCED SIZE
|
Dubilier
|
| SI6820DQ |
N-Channel Reduced Qg / MOSFET with Schottky Diode
From old datasheet system
N-Channel, Reduced Qg, MOSFET with Schottky Diode
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
