PART |
Description |
Maker |
VS-HFA50PA60CHN3 |
Reduced power loss in diode and switching transistor
|
Vishay Siliconix
|
SI9804DY |
20-V (D-S) Single N-Channel Reduced Qg, Fast Switching MOSFET N-Channel Reduced Qg/ Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
SI4384DY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
SI4886DY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
SI7860ADP |
N-Channel Reduced, Fast Switching MOSFET N-Channel Reduced Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
SI6802DQ |
20-V (D-S) Single N-Channel, Reduced Qg, Fast Switching MOSFET
|
Vishay Intertechnology,Inc. Vishay Siliconix
|
SI4824DY |
Asymmetric N-Channel, Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
HCU65R600T |
Extremely low switching loss
|
SemiHow Co.,Ltd.
|
MPAT-02000220-3706 MPAT-10701250-6020 MPAT-0750085 |
2000 MHz - 2200 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.7 dB INSERTION LOSS-MAX 10700 MHz - 12500 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX 7500 MHz - 8500 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.8 dB INSERTION LOSS-MAX 7900 MHz - 8400 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX 7250 MHz - 7750 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX 2100 MHz - 2700 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.5 dB INSERTION LOSS-MAX 17700 MHz - 20200 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 3 dB INSERTION LOSS-MAX 17300 MHz - 18100 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 3 dB INSERTION LOSS-MAX 12750 MHz - 13250 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.5 dB INSERTION LOSS-MAX 5845 MHz - 6430 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
|
MITEQ, Inc.
|
SI6820DQ |
N-Channel Reduced Qg / MOSFET with Schottky Diode From old datasheet system N-Channel, Reduced Qg, MOSFET with Schottky Diode
|
Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
|