| PART |
Description |
Maker |
| 2SC2881 |
Voltage Amplifier Applications
High Voltage : VCEO = 120V High Transition Frequency : fT = 120MHz(typ.)
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2SA812 |
High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) High Voltage: VCEO = -50 V
|
TY Semiconductor Co., Ltd
|
| 2SC4116 |
High voltage and high current: VCEO = 50 V, IC = 150 mA (max).
|
TY Semiconductor Co., Ltd
|
| FAN7081MXGF085 FAN7081GF085 FAN7081MGF085 |
The FAN7081_GF085 is a high-side gate drive IC designed for high voltage and high speed driving of MOSFET or IGBT, which operate up to 600V.
|
Fairchild Semiconductor
|
| KTA1660 |
High Voltage: VCEO=-150V
|
TY Semiconductor Co., Ltd
|
| 2SC2383 |
High voltage VCEO 160V
|
Tiger Electronic Co.,Lt...
|
| KTC4372 |
High Voltage: VCEO=150V
|
TY Semiconductor Co., L...
|
| 2SD814A |
High collector-emitter voltage VCEO Low noise voltage NV
|
TY Semiconductor Co., Ltd
|
| LMBTA44LT1G |
NPN EPITAXIAL PLANAR TRANSISTOR High Breakdown Voltage: VCEO=400
|
Leshan Radio Company
|
| 2SA1807 A5800342 2SA1807TLN 2SA1862TLP 2SA1807TLP |
High-Voltage Switching Transistor (Telephone, Power Supply) (-600V, -1A)
High-Voltage Switching Transistor (Telephone power supply) (-600V, -1A)
From old datasheet system
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 400V V(BR)CEO | 2A I(C) | TO-252VAR
TRANSISTOR | BJT | PNP | 600V V(BR)CEO | 1A I(C) | TO-252VAR 晶体管|晶体管|进步党| 600V的五（巴西）总裁| 1A条一（c）|52VAR
|
ROHM[Rohm]
Rohm Co., Ltd.
|
| PS21961-4 |
IGBT Module; Continuous Collector Current, Ic:3A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:21.3W; Collector Emitter Voltage, Vceo:600V; Package/Case:Super Mini
|
POWEREX INC
|
