PART |
Description |
Maker |
CM150DUS-12F |
IGBT Module; Continuous Collector Current, Ic:150A; Collector Emitter Saturation Voltage, Vce(sat):2V; Power Dissipation, Pd:520W; Collector Emitter Voltage, Vceo:600V 150 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc.
|
2SB1643 |
High collector to emitter VCEO. High collector power dissipation PC.
|
TY Semiconductor Co., Ltd
|
2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW.
|
USHA India LTD
|
2SA539 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW.
|
USHA India LTD
|
2SC945 |
Collector current up to 150mA High hFE linearity Collector to base voltage VCBO 60 V
|
TY Semiconductor Co., L...
|
2SB1219A |
Large collector current IC. Collector-base voltage VCBO -60 V
|
TY Semiconductor Co., Ltd
|
BSP60 BSP62 Q62702-P1166 Q62702-P1168 BSP60BSP62 B |
From old datasheet system PNP Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage)
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Infineon
|
MAX692 MAX692CPA MAX692EJA MAX692EPA MAX692MJA MAX |
Octal D-Type Edge Triggered Flip-Flops with 3-State Outputs 20-CFP -55 to 125 微处理器监控电路 IGBT Module; Transistor Polarity:N Channel; Collector Emitter Voltage, Vceo:1.2kV; Collector Emitter Saturation Voltage, Vce(sat):3.2V; Power Dissipation, Pd:1140W; Package/Case:Module; C-E Breakdown Voltage:1200V From old datasheet system POWER SUPPLY SUPERVISOR,CMOS,DIP,16PIN,PLASTIC Microprocessor Supervisory Circuits
|
Maxim Integrated Produc... Maxim Integrated Products, Inc. MAXIM[Maxim Integrated Products] Maixm Maxim Integrated Products Inc MAXIM - Dallas Semiconductor
|
PC895 PC875 PC865 |
From old datasheet system High Sensitivity, Low Collector Dark Current, High Collector-emitter Voltage Type Photocoupler
|
SHARP[Sharp Electrionic Components]
|
2PB709AW 2PB709AQW 2PB709ASW 2PB709ARW |
High collector current (max. 100 mA). Low collector-emitter saturation voltage (max. 500 mV).
|
TY Semiconductor Co., Ltd
|
BC369 C62702-C748 |
From old datasheet system PNP Silicon AF Transistor (High current gain High collector current Low collector-emitter saturation voltage)
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
2SC3443 |
High hFE=150 to 800. High collector current (Ic=2A). High collector dissipation Pc=500mW.
|
TY Semiconductor Co., Ltd
|