PART |
Description |
Maker |
IDT71P74104S167BQ IDT71P74104S200BQ IDT71P74104S25 |
1.8V 512K x 36 QDR II PipeLined SRAM 1.8V 2M x 9 QDR II PipeLined SRAM 1.8V 1M x 18 QDR II PipeLined SRAM 1.8V 2M x 8 QDR II Pipelined SRAM 18Mb Pipelined QDR II SRAM Burst of 4
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IDT http://
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GS8322Z18B-166I GS8322Z18B-225 GS8322Z18B-225I GS8 |
166MHz 8.5ns 2M x 18 36Mb NBT pipelined/flow through SRAM 225MHz 6.5ns 2M x 18 36Mb NBT pipelined/flow through SRAM 133MHz 11ns 2M x 18 36Mb NBT pipelined/flow through SRAM 150MHz 10ns 2M x 18 36Mb NBT pipelined/flow through SRAM 200MHz 7.5ns 2M x 18 36Mb NBT pipelined/flow through SRAM
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GSI Technology
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K7N403601B K7N403601B-QC13 K7N403609B-QC20 K7N4018 |
128Kx36 & 256Kx18 Pipelined NtRAMTM 256 Megabit, 3.0 Volt-only Page Mode Flash Memory 128Kx36 & 256Kx18 Pipelined NtRAM 128K × 36
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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CY7C1352F CY7C1352F-100AC CY7C1352F-100AI CY7C1352 |
4-Mbit (256Kx18) Pipelined SRAM with NoBLArchitecture 256K X 18 ZBT SRAM, 2.8 ns, PQFP100 4-Mbit (256Kx18) Pipelined SRAM with NoBL(TM) Architecture 4-Mbit (256Kx18) Pipelined SRAM with NoBL Architecture 4-Mbit (256Kx18) Pipelined SRAM with NoBL⑩ Architecture
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Cypress Semiconductor, Corp. Cypress Semiconductor Corp. CYPRESS[Cypress Semiconductor]
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IDT71V3558SA133PFGI IDT71V3558SA100BGG IDT71V3558S |
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/3.3V I/O 128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O/ Burst Counter Pipelined Outputs 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 5 ns, PQFP100 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PQFP100 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.3V的I / O的脉冲计数器输出流水 TV 6C 6#12 SKT WALL RECP Circular Connector; No. of Contacts:41; Series:D38999; Body Material:Metal; Connecting Termination:Crimp; Connector Shell Size:21; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:21-41
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IDT Integrated Device Technology, Inc.
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IDT70V9189L9PFI IDT70V9179L12PFI IDT70V9179L6PFI I |
64K x 9 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through HIGH-SPEED 3.3V 64/32K x 9 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
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IDT[Integrated Device Technology]
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IDT70V9099L12PF IDT70V9099L12PFI IDT70V9199L9PFI I |
From old datasheet system 128K x 9 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through 128K x 8 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through HIGH-SPEED 3.3V 128K x9/x8 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM 高.3 128Kx9/x8同步流水线双端口静态RAM Small Signal Diode 高.3 128Kx9/x8同步流水线双端口静态RAM
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IDT[Integrated Device Technology] Integrated Device Technology, Inc.
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CY7C1460AV25 CY7C1462AV25 |
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM)
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Cypress Semiconductor Corp.
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A67L7332SERIES A67L7336SERIES A67L8316SERIES A67L8 |
Cycle time:7ns; access time:4.5ns; 256K x 16 LVTTL, pipelined DBA SRAM Cycle time:7ns; access time:4ns; 256K x 16 LVTTL, pipelined DBA SRAM Cycle time:7ns; access time:4.2ns; 256K x 16 LVTTL, pipelined DBA SRAM Cycle time:7ns; access time:4.2ns; 128K x 32 LVTTL, pipelined DBA SRAM Cycle time:7ns; access time:4ns; 128K x 32 LVTTL, pipelined DBA SRAM 256K X 16/18. 128K X 32/36 LVTTL. Pipelined DBA SRAM 256 × 16/18128K的X 32/36 LVTTL等级。流水线数据库管理员的SRAM 256K X 16/18, 128K X 32/36 LVTTL, Pipelined DBA SRAM Cycle time:7ns; access time:4.5ns; 128K x 32 LVTTL, pipelined DBA SRAM Cycle time:7.5ns; access time:4.2ns; 128K x 32 LVTTL, pipelined DBA SRAM Cycle time:8.5ns; access time:4.5ns; 128K x 32 LVTTL, pipelined DBA SRAM
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AMIC Technology, Corp.
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CY7C1350 7C1350 |
128Kx36 Pipelined SRAM with NoBL Architecture(带NoBL结构28Kx36流水线式 SRAM) 128K × 36至流水线与总线延迟静态存储器体系结构(带总线延迟结构28K × 36至流水线式的SRAM 128Kx36 Pipelined SRAM with NoBL Architecture(B>NoBL结构28Kx36流水线式 SRAM) From old datasheet system
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Cypress Semiconductor Corp.
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