PART |
Description |
Maker |
IR432DP-T1-GE3 SIR432DP |
Trans MOSFET N-CH 100V 8.6A 8-Pin PowerPAK SO T/R N-Channel 100-V (D-S) MOSFET
|
Vishay Siliconix
|
IRC530-007 IRC540PBF |
IRFL210, SiHFL210 Power MOSFET Trans MOSFET N-CH 100V 28A 5-Pin(5 Tab) TO-220
|
Vishay Siliconix
|
2N6901 |
Trans MOSFET N-CH 100V 1.69A 3-Pin TO-39
|
New Jersey Semiconductor
|
IRF730ASTRRPBF IRF730STRL F730ALPBF |
Trans MOSFET N-CH 400V 5.5A 3-Pin(2 Tab) D2PAK T/R Trans MOSFET N-CH 400V 5.5A 3-Pin(2 Tab) TO-263AB T/R Trans MOSFET N-CH 400V 5.5A 3-Pin(3 Tab) TO-262
|
Vishay Siliconix
|
IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements 100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package -100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package RADIATION HARDENED POWER MOSFET 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY 1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
IRFL9110 IRFL9110TR |
-100V Single P-Channel HEXFET Power MOSFET in a SOT-223 package Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-1.1A)
|
IRF[International Rectifier]
|
IRF5N3710 |
100V Single N-Channel Hi-Rel MOSFET in a SMD-1 package POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.028ohm, Id=45A)
|
IRF[International Rectifier]
|
SUP15P01-52 SUB15P01-52 |
Trans MOSFET P-CH 8V 15A 3-Pin(3 Tab) TO-220AB Trans MOSFET P-CH 8V 15A 3-Pin(2 Tab) TO-263
|
Vishay Siliconix
|
IRHN7150 JANSF2N7268U JANSH2N7268U IRHN3150 IRHN41 |
100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package 100V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package 100V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package 100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package CORD, COILED, 10MM STUD-4MM SKT, 4M; Length, lead:4m RoHS Compliant: NA RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) 抗辐射功率MOSFET表面贴装系统(SMD - 1
|
IRF[International Rectifier] International Rectifier, Corp.
|
IRC503 IRC530 |
100V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package Power MOSFET(Vdss=100V/ Rds(on)=0.16ohm/ Id=14A) Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A) Power MOSFET(Vdss=100V Rds(on)=0.16ohm Id=14A) Hexfet? Power MOSFET
|
IRF[International Rectifier]
|
FDP120N10 |
74 A, 100 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB N-Channel PowerTrench垄莽 MOSFET 100V, 74A, 12m楼? N-Channel PowerTrench? MOSFET 100V, 74A, 12mΩ
|
FAIRCHILD SEMICONDUCTOR CORP
|
IRHNA593160 IRHNA597160 |
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 52A I(D) | SMT 晶体管| MOSFET的| P通道| 100V的五(巴西)直| 52A条(丁)|贴片 -100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package -100V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package
|
Renesas Electronics, Corp. International Rectifier
|