| PART |
Description |
Maker |
| CAT28F001N-15TT CAT28F001P-70B CAT28F001N-15BT CAT |
128K X 8 FLASH 12V PROM, 150 ns, PDIP32
128K X 8 FLASH 12V PROM, 70 ns, PQCC32
128K X 8 FLASH 12V PROM, 70 ns, PDIP32 PLASTIC, DIP-32
x8 Flash EEPROM x8闪存EEPROM
1 Megabit CMOS Boot Block Flash Memory
|
Ironwood Electronics
Atmel, Corp.
Rectron Semiconductor
http://
|
| AM28F512 AM28F512150PC AM28F512-120JEB AM28F512-90 |
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory(12V，CMOS 512K位整体擦除闪速存储器)
IC-512K FLASH MEMORY
4-bit magnitude comparators 16-PDIP 0 to 70
Quad 2-input exclusive-OR gates 14-PDIP 0 to 70
Decade Counter 14-SOIC 0 to 70
Dual J-K Flip-Flops with Clear 14-PDIP 0 to 70
8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-SOIC 0 to 70
Dual J-K Flip-Flops with Clear 14-SOIC 0 to 70
Quad bistable latches 16-SOIC 0 to 70
Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-PDIP 0 to 70
4-bit magnitude comparators 16-SOIC 0 to 70
Quad bistable latches 16-PDIP 0 to 70
Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-SO 0 to 70
8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-SO 0 to 70
Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-SSOP 0 to 70
Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-SOIC 0 to 70
8-Bit Identity/Magnitude Comparators 20-PDIP 0 to 70 64K X 8 FLASH 12V PROM, 120 ns, PDIP32
8-Bit Identity/Magnitude Comparators 20-SOIC 0 to 70 64K X 8 FLASH 12V PROM, 120 ns, PDIP32
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 64K X 8 FLASH 12V PROM, 90 ns, PDSO32
8-Bit Identity/Magnitude Comparators 20-SOIC 0 to 70 64K X 8 FLASH 12V PROM, 120 ns, PQCC32
Quad 2-input exclusive-OR gates 14-SOIC 0 to 70 64K X 8 FLASH 12V PROM, 90 ns, PQCC32
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 64K X 8 FLASH 12V PROM, 90 ns, PQCC32
Quad 2-input exclusive-OR gates 14-SO 0 to 70 64K X 8 FLASH 12V PROM, 90 ns, PDIP32
8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-PDIP 0 to 70 64K X 8 FLASH 12V PROM, 150 ns, PDSO32
ER 14C 14#16 PIN RECP LINE
64K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc.
PROM
ADVANCED MICRO DEVICES INC
SPANSION LLC
|
| M28F512-15XC1 M28F512-12C6 |
64K X 8 FLASH 12V PROM, 15 ns, PQCC32
64K X 8 FLASH 12V PROM, 12 ns, PQCC32
|
STMICROELECTRONICS
|
| CAT28F512TR-12T |
64K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
ON SEMICONDUCTOR
|
| AM28F512A-120JEB AM28F512A-120PEB AM28F512A-120FEB |
Divide-By-Twelve Decade Counter 14-PDIP 0 to 70
Divide-By-Twelve Decade Counter 14-SOIC 0 to 70
Quadruple 2-Input Positive-NAND Gates 14-SOIC -40 to 85
Quadruple 2-Input Positive-NAND Gates 14-SO -40 to 85
Quadruple 2-Input Positive-Nor Gates 14-TVSOP -40 to 85
4-Bit Binary Counters 14-SO 0 to 70
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 512千比特（64亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
Quadruple 2-Input Positive-Nor Gates 14-TSSOP -40 to 85 2正输入或非门 14-TSSOP封装40℃到85
Hex Inverters 14-SSOP -40 to 85 512千比特（64亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
Hex Inverters 14-TVSOP -40 to 85 512千比特（64亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
Hex Inverters 14-SO -40 to 85 512千比特（64亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
4-Bit Binary Counters 14-SOIC 0 to 70 64K X 8 FLASH 12V PROM, 150 ns, PDSO32
Quadruple 2-Input Positive-NAND Gates 14-TVSOP -40 to 85 64K X 8 FLASH 12V PROM, 200 ns, PDSO32
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 64K X 8 FLASH 12V PROM, 120 ns, PQCC32
Quadruple 2-Input Positive-NAND Gates 14-TSSOP -40 to 85 512千比特（64亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
Hex Inverters 14-SOIC -40 to 85 64K X 8 FLASH 12V PROM, 90 ns, PDIP32
Quadruple 2-Input Positive-Nor Gates 14-SO -40 to 85 64K X 8 FLASH 12V PROM, 70 ns, PQCC32
Quadruple 2-Input Positive-Nor Gates 14-SOIC -40 to 85
|
Advanced Micro Devices, Inc.
PROM
ADVANCED MICRO DEVICES INC
|
| M28W231-120N1TR M28W231-120N6TR M28W231-180N5TR M2 |
256K X 8 FLASH 12V PROM, 120 ns, PDSO40 10 X 20 MM, TSOP-40
256K X 8 FLASH 12V PROM, 180 ns, PDSO40 10 X 20 MM, TSOP-40
256K X 8 FLASH 12V PROM, 150 ns, PDSO40 10 X 20 MM, TSOP-40
256K X 8 FLASH 12V PROM, 100 ns, PDSO40 10 X 20 MM, TSOP-40
|
ST Microelectronics
|
| IS28F020-120PL IS28F020-120PLI IS28F020-120T IS28F |
262,144 x 8 CMOS FLASH MEMORY 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
262,144 x 8 CMOS FLASH MEMORY 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
CAP 33UF 6V 20% TANT SMD-3216-18 TR-7
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
|
| AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| M28F201-70K6 M28F201-90N3TR |
256K X 8 FLASH 12V PROM, 70 ns, PQCC32
256K X 8 FLASH 12V PROM, 90 ns, PDSO32
|
STMICROELECTRONICS
|
| M28V841-100N3RTR M28V841-150N3R M28V841-120N3RTR M |
1M X 8 FLASH 12V PROM, 100 ns, PDSO40 10 X 20 MM, PLASTIC, REVERSE, TSOP-40
1M X 8 FLASH 12V PROM, 150 ns, PDSO40 10 X 20 MM, PLASTIC, REVERSE, TSOP-40
1M X 8 FLASH 12V PROM, 120 ns, PDSO40 10 X 20 MM, PLASTIC, REVERSE, TSOP-40
|
ST Microelectronics
|
| AM29LV160BT-90WCC AM29LV160BT-90EE AM29LV160BT-90S |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1M X 16 FLASH 3V PROM, 90 ns, PBGA48
1M X 16 FLASH 3V PROM, 90 ns, PDSO48
1M X 16 FLASH 3V PROM, 90 ns, PDSO44
1M X 16 FLASH 3V PROM, 70 ns, PDSO48
1M X 16 FLASH 3V PROM, 120 ns, PDSO48
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
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