PART |
Description |
Maker |
RJK5013DPE-00-J3 RJK5013DPE |
14 A, 500 V, 0.465 ohm, N-CHANNEL, Si, POWER, MOSFET Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
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MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E |
16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
|
ETC Motorola, Inc ON Semiconductor
|
IRFF430 FN1894 |
2.75A, 500V, 1.500 Ohm, N-Channel Power MOSFET 2.75 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF 2.75A/ 500V/ 1.500 Ohm/ N-Channel Power MOSFET From old datasheet system
|
Intersil, Corp. Intersil Corporation
|
PSO0.5 |
RESISTOR, WIRE WOUND, 1.5 W, 5; 10; 20 %, 1000; 1500; 3000 ppm, 500 ohm - 500000000 ohm, CHASSIS MOUNT ROHS COMPLIANT
|
KOA Speer Electronics,Inc.
|
STW29NK50Z |
31 A, 500 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC N-CHANNEL 500 V - 0.105ohm - 31A TO-247 Zener-Protected SuperMESH MOSFET N-CHANNEL 500 V - 0.105 Ohm - 31A TO-247 Zener-Protected SuperMESH MOSFET
|
STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
RFP2N20 FN2881 |
2A/ 200V/ 3.500 Ohm/ N-Channel Power MOSFET 2A 200V 3.500 Ohm N-Channel Power MOSFET From old datasheet system 2A, 200V, 3.500 Ohm, N-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
PPF430E |
N Channel MOSFET; Package: SMD-.5; ID (A): 2.6; RDS(on) (Ohms): 1.5; PD (W): 125; BVDSS (V): 500; Rq: 1; 4.3 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
STW19NM50N STF19NM50N STP19NM50N |
N-channel 500 V, 0.2 Ohm, 14 A MDmesh(TM) II Power MOSFET in TO-247 N-channel 500 V, 0.2 Ohm, 14 A MDmesh(TM) II Power MOSFET in TO-220FP
|
ST Microelectronics
|
IRF830 FN1582 |
4.5A/ 500V/ 1.500 Ohm/ N-Channel Power MOSFET From old datasheet system 4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
S3921 S3921-512Q S3921-128Q |
NMOS linear image sensor Voltage output type with current-integration readout circuit and impedance conversion circuit MOSFET, Switching; VDSS (V): 500; ID (A): 12; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.515; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: TO-220FN
|
Hamamatsu Photonics
|
856288 |
465 MHz SAW Filter
|
TriQuint Semiconductor
|
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