| PART |
Description |
Maker |
| TSC607-ZPPACKOF10 TSC506-ZP |
IC FLEX 10KE FPGA 200K 600-BGA
780-pin FineLine BGA BEFESTIGUNGSKLAMMER多珀0ST
|
OSRAM GmbH
|
| CXK77P36E160GB-43BE CXK77P18E160GB-4BE CXK77P18E16 |
1M X 18 STANDARD SRAM, 3.7 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 18 STANDARD SRAM, 4.5 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 18 STANDARD SRAM, 3.8 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 18 STANDARD SRAM, 4.1 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18) 16Mb的龙运RL HSTL高速同步静态存储器（为512k × 3600万18
CAP 820PF 50V 20% X7R SMD-0603 TR-7 PLATED-NI/SN
|
http://
Yuasa Battery, Inc.
Integrated Circuit Technology Corp
Microsemi, Corp.
Sony, Corp.
Sony Corporation
|
| FDZ291P06 FDZ291P |
P-Channel 1.5 V Specified PowerTrench? BGA MOSFET
P-Channel 1.5 V Specified PowerTrench㈢ BGA MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| GWIXP455AAC EWIXP455AACT EWIXP465AAC EWIXP465AAD E |
400 MHz, RISC PROCESSOR, PBGA544 PLASTIC, BGA-544
400 MHz, RISC PROCESSOR, PBGA544 ROHS COMPLIANT, PLASTIC, BGA-544
533 MHz, RISC PROCESSOR, PBGA544 ROHS COMPLIANT, PLASTIC, BGA-544
266 MHz, RISC PROCESSOR, PBGA544 ROHS COMPLIANT, PLASTIC, BGA-544
266 MHz, RISC PROCESSOR, PBGA544 PLASTIC, BGA-544
667 MHz, RISC PROCESSOR, PBGA544 ROHS COMPLIANT, PLASTIC, BGA-544
533 MHz, RISC PROCESSOR, PBGA544 PLASTIC, BGA-544
|
Intel, Corp.
INTEL CORP
|
| PC48F4400P0VT00A RC48F4400P0VT00A |
32M X 16 FLASH 1.8V PROM, 88 ns, PBGA64 LEAD FREE, BGA-64
32M X 16 FLASH 1.8V PROM, 88 ns, PBGA64 BGA-64
|
Intel, Corp.
|
| US115T US115TE US112 US112T US112E US211 US211E US |
Analog IC
Intel® LXT16726 DeMUX, 132-pin BGA, Tray
Intel® LXT16726 DeMUX, 142-pin BGA, Tray
|
|
| FDZ2553NZ |
Monolithic Common Drainl N-Channel 2.5V Specified PowerTrench BGA MOSFET
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench BGA MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| MT49H8M32BM-4 MT49H8M32FM-4 |
8M X 32 DDR DRAM, PBGA144 11 X 18.50 MM, LEAD FREE, MICRO, BGA-144
8M X 32 DDR DRAM, PBGA144 11 X 18.50 MM, MICRO, BGA-144
|
NEC, Corp.
|
| EPM7512AEBC256-10 EPM7256AEFC100-10 |
COMPLEX-EEPLD,512-CELL,10NS PROP DELAY,BGA,256PIN,PLASTIC
COMPLEX-EEPLD,256-CELL,10NS PROP DELAY,BGA,100PIN,PLASTIC
|
Altera Corp
|
| K7P401823B-HC650 K7P401823B-HC750 K7P403623B |
256K X 18 STANDARD SRAM, 6.5 ns, PBGA119 14 X 22 MM, BGA-119
256K X 18 STANDARD SRAM, 7.5 ns, PBGA119 14 X 22 MM, BGA-119
128Kx36 & 256Kx18 SRAM
|
Samsung semiconductor
|
| IS61NVP51236-250B2I IS61NVP102418-250B2I IS61NVP10 |
512K X 36 ZBT SRAM, 2.6 ns, PBGA119 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-119
1M X 18 ZBT SRAM, 2.6 ns, PBGA119 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-119
1M X 18 ZBT SRAM, 3.1 ns, PBGA119 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-119
|
Integrated Silicon Solution, Inc.
|
| W9864G2DB-7 |
BGA SDRAM
|
Winbond Electronics
|
|
