| PART |
Description |
Maker |
| ZQB35M ZQB35H ZQB35L |
Rating at 25 Ambient temp. Unless otherwise specified. Single phase, half sine wave, 60HZ,resistive or inductive load.
|
Gaomi Xinghe Electronics Co., Ltd.
|
| SC35A SC35B SC35D SC35G SC35J SC35K SC35M |
Rating at 25?Ambient temp. Unless otherwise specified. Single phase, half sine wave, 60HZ,resistive or inductive load.
|
Gaomi Xinghe Electronic...
|
| AR3500 ARS3500 ARS3502 ARS3504 ARS3501 |
Rating at 25 Ambient temp. Unless otherwise specified. Single phase, half sine wave, 60HZ,resistive or inductive load.
|
Gaomi Xinghe Electronics Co., Ltd.
|
| 5707.0801.312 |
FILTER, IEC, 8A, 2P FUSE; Current rating:8A; Temp, op. max:85(degree C); Temp, op. min:-25(degree C) RoHS Compliant: Yes
|
SCHURTER INC
|
| DS1249W DS1249W-150-IND DS1249W-100 DS1249W-100-IN |
3.3V 2048kb Nonvolatile SRAM 3.3V2048kb非易失SRAM
CAPACITOR, CLASS Y2 33NFCAPACITOR, CLASS Y2 33NF; Capacitance:33nF; Voltage rating, AC:250V; Voltage rating, DC:2500V; Capacitor dielectric type:Polypropylene; Series:B81122; Tolerance, :20%; Tolerance, -:20%; Temp, op. 3.3 2048kb非易失SRAM
CAPACITOR, CLASS Y2 27NFCAPACITOR, CLASS Y2 27NF; Capacitance:27nF; Voltage rating, AC:250V; Voltage rating, DC:2500V; Capacitor dielectric type:Polypropylene; Series:B81122; Tolerance, :20%; Tolerance, -:20%; Temp, op.
CAPACITOR, CLASS Y2 330NFCAPACITOR, CLASS Y2 330NF; Capacitance:330nF; Voltage rating, AC:250V; Voltage rating, DC:2500V; Capacitor dielectric type:Polypropylene; Series:B81122; Tolerance, :20%; Tolerance, -:20%; Temp, op.
3.3V 2048k Nonvolatile SRAM
|
Dallas Semiconducotr
DALLAS[Dallas Semiconductor]
MAXIM - Dallas Semiconductor
|
| IDT54FCT534AL IDT74FCT374A IDT54FCT374CEB IDT74FCT |
TEMP CONTROLLER, PIDTEMP CONTROLLER, PID; Accuracy, calibrated:The greater of /-0.25% of reading, or /-1c, or /-1LSD; Ambient conditions:0-55C; Contact Rating:2A, 240Vac resistive; Control Modes:PID or ON/OFF control; Depth,
CAP 0.1UF 50V 10% X7R RAD-.2IN .190X.190 MOLDED T&R S-MIL-PRF-39014 快速CMOS八路D寄存器（3态）
FAST CMOS OCTAL D REGISTERS (3-STATE) 快速CMOS八路D寄存器（3态）
8358 PBGA NON-ENC NO-PB 快速CMOS八路D寄存器（3态）
|
INTEGRATED DEVICE TECHNOLOGY INC
IDT
Integrated Device Technology, Inc.
|
| 54LS76 S7476W S7476F S74LS76W S74LS76F 74LS76 54_7 |
ENCLOSURE, CARDMASTER POLYCARBONATE; Length / Height, external:160mm; Width, external:166mm; Depth, external:118mm; Material:Polycarbonate; Colour:Light Grey; Flammability rating:UL 94 5V; IP rating:IP 65; RAL number:7035; Temp, op.
DUAL JK FLIP - FLOP 双JK触发次浮点运
|
Signetics
ETC[ETC]
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
|
| 28LV010RPDE-25 28LV010RT1DE-25 28LV010RT2DE-25 28L |
3.3V 1 Megabit (128K x 8-Bit) EEPROM
3.3V 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 3V, 200 ns, DFP32
3.3V 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 3V, 200 ns, DIP32
3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位）的EEPROM
CAP-ARR 200PF X4 100V 10% NP0(C0G) SMD-0508 PLATED-NI/SN TR-7 1K/REEL
CAP ARRAY, 2 X 10NF 50V 0508X7RCAP ARRAY, 2 X 10NF 50V 0508X7R; Capacitance:10nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W2A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C);
CAP ARRAY, 2 X 22NF 16V 0405X5RCAP ARRAY, 2 X 22NF 16V 0405X5R; Capacitance:22nF; Voltage rating, DC:16V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :20%; Tolerance, -:20%; Temp, op. max:85(degree C);
CAP ARRAY, 2 X 15PF 50V 0405NPOCAP ARRAY, 2 X 15PF 50V 0405NPO; Capacitance:0.015nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C);
CAP ARRAY, 2 X 680PF 50V 0405NPOCAP ARRAY, 2 X 680PF 50V 0405NPO; Capacitance:0.68nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C);
CAP ARRAY, 4 X 100PF 50V 0508NPOCAP ARRAY, 4 X 100PF 50V 0508NPO; Capacitance:0.1nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W2A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C);
CAP ARRAY, 2 X 10NF 16V 0405X7RCAP ARRAY, 2 X 10NF 16V 0405X7R; Capacitance:10nF; Voltage rating, DC:16V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :20%; Tolerance, -:20%; Temp, op. max:125(degree C);
Ceramic Capacitor Array; Capacitor Type:Chip Array; Capacitance:22pF; Capacitance Tolerance: /- 10%; Voltage Rating:50VDC; Capacitor Dielectric Material:Multilayer Ceramic; Package/Case:0405; Termination:SMD RoHS Compliant: Yes
CAP ARRAY, 2 X 1000PF 50V 0405X7RCAP ARRAY, 2 X 1000PF 50V 0405X7R; Capacitance:1nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C);
|
Maxwell Technologies, Inc
|
| 80C186EC 80C188EC 80L186EC 80L188EC 80C186EC20 80C |
16-BIT HIGH-INTEGRATION EMBEDDED PROCESSORS 16位高集成嵌入式处理器
CAPACITOR 4700UF 16V CAPACITOR 4700UF 16V; CAPACITANCE:4700UF; VOLTAGE RATING, DC:16V; CAPACITOR DIELECTRIC TYPE:ALUMINIUM ELECTROLYTIC; SERIES:ZLH; TEMP, OP. MAX:105(DEGREE C); TEMP, OP. MIN:-40(DEGREE C); TOLERANCE, :20%; RoHS Compliant: Yes
|
Intel Corp.
Intel, Corp.
|
| A23L26161 A23L2616 A23L2616V-70 A23L2616V-100 A23L |
Power Resistor; Series:MK; Resistance:20kohm; Resistance Tolerance: /- 1 %; Power Rating:0.75W; Voltage Rating:400V; Temperature Coefficient: /-50 ppm; Mounting Type:Through Hole; Operating Temp. Min:0 C
4M X 16 / 8M X 8 BIT CMOS MASK ROM 4米16 / 8米8位CMOS掩膜ROM
Circular Connector; No. of Contacts:41; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:22; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle 4米16 / 8米8位CMOS掩膜ROM
|
http://
AMICC[AMIC Technology]
AMIC Technology Corporation
AMIC Technology, Corp.
|
| AM29LV800BT-80DTC2 AM29LV800BT-80DGI2 AM29LV800BT- |
25NS,OTP CERDIP,883C; LEV B FULLY CMPLNT(EPLD)
20NS, OTP, PLCC, COM TEMP(EPLD)
20NS, SOIC, IND TEMP(EPLD)
25NS, SOIC, COM TEMP(EPLD)
20NS,OTP LCC,883C; LEVEL B FULLY CMPLNT(EPLD)
10MHZ, 8 DIP, COM TEMP(FPGA)
10MHZ, 20 PLCC, IND TEMP(FPGA)
10MHZ, 32 TQFP, COM TEMP(FPGA)
10MHZ, 44 PLCC, COM TEMP(FPGA)
30MHZ, 3.3V, 20 PLCC, COM TEMP(FPGA)
8 TSSOP,PB/HALO FREE,IND,1.8V(SERIAL EE)
DIE SALE, 1.8V, 11 MIL(SERIAL EE)
8 PDIP,PB/HALO FREE,IND TEMP,1.8V(SERIAL EE)
65K CONFIG MEM, 20 PLCC, IND TEMP(FPGA)
10MHZ, 20 SOIC, IND TEMP(FPGA)
128K CONFIG MEM, 20 PLCC, COM(FPGA)
EEPROM EEPROM
10MHZ, 8 NSOIC, COM TEMP(FPGA) EEPROM
512K X 16 FLASH 3V PROM, 120 ns, UUC44
10MHZ, 8 LAP, 5K MOQ(FPGA)
10MHZ, 8 N-SOIC, COM TEMP(FPGA)
10MHZ, 20 PLCC, COM TEMP(FPGA)
512K X 16 FLASH 3V PROM, 80 ns, UUC44
|
ADVANCED MICRO DEVICES INC
|
|
