PART |
Description |
Maker |
1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode 100 V, 500 mA, gold bonded germanium diode 12 V, 500 mA, gold bonded germanium diode 90 V, 500 mA, gold bonded germanium diode GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION) 75 V, 500 mA, gold bonded germanium diode 120 V, 500 mA, gold bonded germanium diode 70 V, 500 mA, gold bonded germanium diode 80 V, 500 mA, gold bonded germanium diode 115 V, 500 mA, gold bonded germanium diode 60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics ETC[ETC]
|
2N4401 |
NPN Transistor Plastic-Encapsulate Transi stors
|
SeCoS Halbleitertechnologie GmbH
|
MP1612 MP1612B MP1613 40612 40623 40626 |
GERMANIUM POWER TRANSISTORS
|
New Jersey Semi-Conduct...
|
2N1038 2N1039 2N1040 2N1041 2N2554 2N2556 2N2552 2 |
PNP GERMANIUM ALLOY JUNCTION POWER TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
|
NTE158 |
Germanium PNP Transistor Audio Power Amplifier
|
NTE[NTE Electronics]
|
NTE135 NTE131 |
Germanium Complementary Transistors Audio Power Amplifier
|
NTE[NTE Electronics]
|
UPC3225TB-E3 UPC3225TB-E3-A |
5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER
|
NEC
|
1N3110 1N949 1N3287 1N3287WUSN 1N3125 1N3146 1N994 |
8 V, 500 mA, gold bonded germanium diode 40 V, 500 mA, gold bonded germanium diode 6 V, 200 mA, gold bonded germanium diode GOLD BONDED DIODES 6 V, 500 mA, gold bonded germanium diode 25 V, 500 mA, gold bonded germanium diode 60 V, 500 mA, gold bonded germanium diode 15 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics ETC[ETC] Electronic Theatre Controls, Inc.
|
AA113 2-OA95 2-OA90 2-OA91R JAN1N3287X 1N3287R JAN |
65 V, GERMANIUM, SIGNAL DIODE 100 V, GERMANIUM, SIGNAL DIODE 30 V, GERMANIUM, SIGNAL DIODE 6 V, GERMANIUM, SIGNAL DIODE 20 V, GERMANIUM, SIGNAL DIODE
|
MICROSEMI CORP MICROSEMI CORP-LAWRENCE
|
NTE213 |
Germanium PNP Transistor High Power, High Gain Amplifier
|
NTE[NTE Electronics]
|
BGA61208 |
Silicon Germanium Broadband MMIC Amplifier 0 MHz - 2800 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
Infineon Technologies AG
|