| PART |
Description |
Maker |
| 2SC4446 |
Very small-sized package High VEBO.Collector-base voltage VCBO 60 V
|
TY Semiconductor Co., Ltd
|
| KTC4526 |
TRIPLE DIFFUSED NPN TRANSISTOR (HIGH VOLTAGE AND HIGH RELLABILITY HIGH SPEED SWITCHING, WIDE SOA)
|
KEC Holdings
KEC(Korea Electronics)
|
| KTC4526 |
TRIPLE DIFFUSED NPN TRANSISTOR (HIGH VOLTAGE AND HIGH RELLABILITY HIGH SPEED SWITCHING/ WIDE SOA)
|
KEC(Korea Electronics)
|
| WP06R WP06R12D05 WP06R12D12 WP06R12D15 WP06R12S05 |
High Density 5-6 Watt Wide Input Range DC/DC Converter
5-6 WATT HIGH DENSITY, WIDE INPUT RANGE DC/DC CONVERTER
5-6 WATT HIGH DENSITY/ WIDE INPUT RANGE DC/DC CONVERTER
RECTIFIER SCHOTTKY SINGLE 2A 40V 50A-Ifsm 0.55Vf 0.5A-IR PowerDI-123 3K/REEL
|
CANDD[C&D Technologies]
|
| BSR17A |
High current (max. 100 mA). Low voltage (max. 40 V). Emitter-base voltage VEBO 6 V
|
TY Semiconductor Co., Ltd
|
| GBPC2501 GBPC2508 GBPC25005 GBPC2502 GBPC2504 GBPC |
RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS 抗辐射高效，5安培开关稳压器
50-A, 8-V to 14-V Input, Non-Isolated, Wide Output Adjust, Vertical Power Module w/ TurboTrans Techn 21-DIP MODULE -40 to 85 高硅桥式整流器电流（电压- 5000伏特电流-二五安培
3 A, Wide Input Non-Isolated, Wide Output Adjust Module 7-DIP MODULE -40 to 85 高硅桥式整流器电流（电压- 5000伏特电流-二五安培
HIGH CURRENT SILICON BRIDGE RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 25 Amperes)
|
PanJit International, Inc.
PanJit International Inc.
PANJIT[Pan Jit International Inc.]
|
| GS8160Z18BGT-200IT GS8160Z18BGT-150IT GS8160Z36BGT |
Dual 2-wide 2-input AND-OR-Invert Gates 14-SOIC 0 to 70 35.7流水线和流量，通过同步唑的SRAM
INNOLINE: High Voltage Output Series - For Telecom DSM, XDSL, Aplication- Internal Pi Filter- Multi-Outputs- Overcurrent Protection- High Efficiency to 86% 35.7流水线和流量，通过同步唑的SRAM
Dual 2-wide 2-input AND-OR-Invert Gates 14-PDIP 0 to 70 35.7流水线和流量，通过同步唑的SRAM
18Mb Pipelined and Flow Through Synchronous NBT SRAM 35.7流水线和流量，通过同步唑的SRAM
RECTIFIER SCHOTTKY SINGLE 1A 30V 12A-Ifsm 0.42Vf 1A-IR SOD-123 3K/REEL
HIGH CURRENT SCHOTTKY DIODE
CAP 1000UF 50V ELECT FC RADIAL
|
GSI Technology
http://
Cypress Semiconductor Corp.
Electronic Theatre Controls, Inc.
|
| GBPC2501 GBPC35005 GBPC25005 GBPC25 GBPC2510 GBPC3 |
HIGH CURRENT 15,25,35,AMPS. SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIERS
Dual General-Purpose Operational Amplifier 8-TSSOP 0 to 70
RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS 抗辐射高效，5安培开关稳压器
HIGH CURRENT 15,25,35,AMPS. SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIERS 大电5,25,35，安培。单相桥式整流器玻璃钝化
ECONOLINE: RSZ/P - 1kVDC ECONOLINE：RSZ / P - 1kVDC 2kVDC隔离UL94V - 0封装材料所需的散热片，无外置。组件所需的环形磁ContinuousShort电路保护 P的后缀
0.8 to 1.8-V 8-A, 12-V Input Non-Isolated Wide-Adjust SIP Module 8-SIP MODULE -40 to 85 大电5,25,35，安培。单相桥式整流器玻璃钝化
1.5 A, Wide Input, Non-Isolated, Wide Negative Output Adjust Module 5-DIP MODULE
10 A 12-V Input Bus Termination Power Module for DDR/QDR Memory 10-DIP MODULE -40 to 85
6-A Wide-Input Voltage Adjustable Switching Regulator 7-DIP MODULE -40 to 85
HIGH CURRENT 15/25/35/AMPS. SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIERS
8 A, 3.3-V Input Non-Isolated Wide-Output Adjust w/Auto-Track 8-SIP MODULE -40 to 85
|
Surge Components, Inc.
Shanghai Sunrise Electronics
SURGE[Surge Components]
|
| MC35071U MC35072 MC33071AD MC33071AP MC33074D MC35 |
High Slew Rate, Wide Bandwidth, Single Supply Operational Amplifiers
(MC35071 / MC35072 / MC35074) High Slew Rate / Single Supply Operational Amplifiers
V(cc): 44V; high slew rate, wide bandwidth, single supply operational amplifier
|
MOTOROLA[Motorola, Inc]
|
| HF50-12F |
NPN Silicon RF Power Transistor(Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V)(NPN 硅型射频功率晶体Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V)) HF BAND, Si, NPN, RF POWER TRANSISTOR
NPN Silicon RF Power Transistor(Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V)(NPN 纭??灏??????朵?绠?Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V))
|
Advanced Semiconductor, Inc.
ADVANCED SEMICONDUCTOR INC
|
| ASI10652 TVU150 |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator UHF BAND, Si, NPN, RF POWER TRANSISTOR
NPN Silicon RF Power Transistor(Ic:25A,Vcbo: 28 V,Vceo: 60 V,Vebo: 3.5 V)(NPN 硅型射频功率晶体Ic:25A,Vcbo: 28 V,Vceo: 60 V,Vebo: 3.5 V))
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| R1RW0408DGE-2PI R1RW0408DI |
Memory>Fast SRAM>Asynchronous SRAM
Wide Temperature Range Version 4M High Speed SRAM (512-kword 】 8-bit)
Wide Temperature Range Version 4M High Speed SRAM (512-kword 隆驴 8-bit)
Wide Temperature Range Version 4M High Speed SRAM (512-kword × 8-bit)
|
Renesas Electronics Corporation
|
