| PART |
Description |
Maker |
| RFT1P06E FN4495 |
1.4A, 60V, 0.285 Ohm, ESD Rated, P-Channel Power MOSFET 1.4 A, 60 V, 0.285 ohm, P-CHANNEL, Si, POWER, MOSFET
1.4A/ 60V/ 0.285 Ohm/ ESD Rated/ P-Channel Power MOSFET
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| PE4925 |
75 Ohm SMB Jack Bulkhead Connector Clamp/Solder Attachment For RG179, RG187, .285 inch D Hole
|
Pasternack Enterprises, Inc.
|
| PE4255 |
75 Ohm SMB Jack Bulkhead Connector Crimp/Solder Attachment For RG179, RG187, .285 inch D Hole
|
Pasternack Enterprises, Inc.
|
| 3N70G-TM3-T |
3 A, 700 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
|
UNISONIC TECHNOLOGIES CO LTD
|
| MA4EX950L-1225 MA4EX950L-1225T NJG1557KB2-L8 NJG15 |
Low Cost Silicon Double Balanced HMIC Mixer, 700 - 1200 MHz
低成本硅双平衡HMIC搅拌机，700 - 1200兆赫
Low Cost Silicon Double Balanced HMICMixer, 700 - 1200 MHz 低成本硅HMIC⑩双平衡混频器，700 - 1200兆赫
|
MACOM[Tyco Electronics]
Microsemi, Corp.
|
| DP52-0004 DP52-0004TR |
Low Cost SMT Dual Band Diplexer 400-700/1100-1940 MHz 低成本贴片双频双工器400-700/1100-1940兆赫
|
3M Company
|
| ISL9G1260EP3 ISL9G1260ES3 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-220AB
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|甲一（c）|63AB
|
Hynix Semiconductor, Inc.
|
| K63429AMFG0L-C |
2.9 V FIXED POSITIVE LDO REGULATOR, 0.285 V DROPOUT, PDSO4
|
TOKO INC
|
| FS10SM-14A FS10SM-14 |
20 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor 10 A, 700 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Powerex, Inc.
Powerex Power Semiconductors
Mitsubishi Electric Corporation
|
| MMFT2406T1 MMFT2406T MMFT2406T1_D ON2217 |
MEDIUM POWER TMOS FET 700 mA 240 VOLTS 0.7 A, 240 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
N-hannel Enhancement-ode Logic Level SOT23
From old datasheet system
|
Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
|
