| PART |
Description |
Maker |
| NAND512-M NAND512W3M2 NAND512R4M3 NAND512R4M5 NAND |
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP 同一封装内整合了256/512Mb/1Gb（x8/x16.8/3V28字节页）NAND闪存以及256/512Mb（x16/x32.8V的）LPSDRAM的MCP
|
意法半导
STMicroelectronics N.V.
|
| K524G2GACB-A050 |
4Gb NAND Flash 2Gb Mobile DDR
|
Samsung semiconductor
|
| EBD11UD8ADDA-7B EBD11UD8ADDA EBD11UD8ADDA-6B EBD11 |
1GB DDR SDRAM SO-DIMM (128M words x64 bits, 2 Ranks) 1GB的DDR SDRAMSO - DIMM笔记本（128兆位X64的话个等级）
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| TS24MP320 TS2GMP320 |
2G/4G x8 Flash Memory
2GB/4GB USB Flash Drive
|
Transcend Information. Inc.
|
| W3EG7264S-AD4 |
512MB - 2x32Mx72 DDR ECC SDRAM UNBUFFERED w/PLL 512MB 2x32Mx72的DDR ECC的内存缓冲瓦锁相
|
Optrex America, Inc.
|
| W3EG2128M72AFSR265D3XG |
2GB - 2x128Mx72 DDR SDRAM REGISTERED ECC, w/PLL, FBGA 2GB 2x128Mx72 ECC的DDR SDRAM的注册，瓦特/锁相环，FBGA封装
|
Murata Manufacturing Co., Ltd.
|
| W3EG72256MS133AJD3SG |
2GB-256Mx72 DDR SDRAM REGISTERED ECC w/PLL 2GB 256Mx72 ECC的DDR SDRAM的注册瓦锁相
|
Xilinx, Inc.
|
| HYMP325S64MP8 HYMP112S648 HYMP112S64P8 |
DDR2 SDRAM - SO DIMM 2GB
DDR2 SDRAM - SO DIMM 1GB
|
Hynix Semiconductor
|
| DOM44S3R288 DOM44S3R224 |
44Pin Flash Disk Module Min.16MB ~ Max.512MB, True IDE Interface 44Pin盘模块Min.16MBMax.512MB，真IDE接口
|
Hanbit Electronics Co., Ltd.
|
| DOM40S3R288 DOM40S3R080 |
40Pin Flash Disk Module Min.16MB ~ Max.512MB, True IDE Interface 40Pin盘模块Min.16MBMax.512MB，真IDE接口
|
Hanbit Electronics Co., Ltd.
|
| TS4GJF2A |
4GB USB2.0 JetFlash垄莽2A
4GB USB2.0 JetFlash?2A
|
Transcend Information. Inc.
|
| KBE00S003M-D411 KBE00S003M |
1Gb NAND*2 256Mb Mobile SDRAM*2
From old datasheet system
1Gb NANDx2 256Mb Mobile SDRAMx2
|
SAMSUNG[Samsung semiconductor]
|
