PART |
Description |
Maker |
1N1301 1N2283 1N4526 1N1196A 1N1196 1N2021 1N1192A |
Standard Rectifier (trr more than 500ns) (1N2xxx) SILICON POWER RECTIFIER SILICON POWER RECTIFIER 40 A, 200 V, SILICON, RECTIFIER DIODE, DO-203AB (1N4525 - 1N4529) SILICON POWER RECTIFIER SILICON POWER RECTIFIER 40 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB SILICON POWER RECTIFIER 40 A, 50 V, SILICON, RECTIFIER DIODE, DO-203AB SILICON POWER RECTIFIER 40 A, 350 V, SILICON, RECTIFIER DIODE, DO-203AB SILICON POWER RECTIFIER 40 A, 300 V, SILICON, RECTIFIER DIODE, DO-203AB SILICON POWER RECTIFIER 40 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AB SILICON POWER RECTIFIER
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MICROSEMI[Microsemi Corporation] Microsemi, Corp.
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IR180DR-G06PBF IR150DR-G08PBF IR150DR-G04PBF IR180 |
25 A, 600 V, SILICON, RECTIFIER DIODE 16 A, 800 V, SILICON, RECTIFIER DIODE 16 A, 400 V, SILICON, RECTIFIER DIODE 25 A, 200 V, SILICON, RECTIFIER DIODE 25 A, 1000 V, SILICON, RECTIFIER DIODE 16 A, 1200 V, SILICON, RECTIFIER DIODE 16 A, 100 V, SILICON, RECTIFIER DIODE
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TT electronics Semelab, Ltd.
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1N4748A 1N4732A 1N4758A 1N4745A 1N4754A 1N4744A 1N |
Silicon Power Z-Diode for Voltage Stabilization(稳定电压22V,稳定电1.5mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电2V的,稳定电流一十一点五毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压3.9V,稳定电4mA的硅功率齐纳二极 硅功Z -二极管的电压稳定(稳定电压均.9V,稳定电流六十四毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压16V,稳定电5.5mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电6V的稳定电流一十五点五毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压9.1V,稳定电8mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电.1V,稳定电8毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压12V,稳定电1mA的硅功率齐纳二极 硅功率Z -二极管的稳定电压12V的稳定电压,稳定电流21毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压75V,稳定电.3mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电5V的,稳定电流三点三毫安的硅功率齐纳二极管 Silicon Power Z-Diodes 硅功率Z -二极 Silicon Power Z-Diode for Voltage Stabilization(稳定电压13V,稳定电9mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电3V的,稳定电流十九毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压20V,稳定电2.5mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电0V的,稳定电流十二点五毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压8.2V,稳定电1mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电.2V,稳定电流三一毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压6.2V,稳定电1mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电.2V,稳定电1毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压3.6V,稳定电9mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电.6V的稳定电9毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压4.7V,稳定电3mA的硅功率齐纳二极 Silicon Power Z-Diode for Voltage Stabilization(稳定电压5.1V,稳定电9mA的硅功率齐纳二极 From old datasheet system Silicon Power Z?Diodes
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Vishay Intertechnology, Inc. Vishay Intertechnology,Inc. TFUNK[Vishay Telefunken]
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MDA920A6 MDA920A4 MDA920A7 MDA920A2 MDA920A5 MDA92 |
1.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 300 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 25 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
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Motorola Mobility Holdings, Inc.
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EFM301L EFM302L EFM303L EFM304L EFM305L EFM306L EF |
3 A, 150 V, SILICON, RECTIFIER DIODE 3 A, 600 V, SILICON, RECTIFIER DIODE SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER VOLTAGE RANGE 50 to 600 Volts CURRENT 3.0 Ampere 3 A, 200 V, SILICON, RECTIFIER DIODE
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RECTRON LTD Rectron Semiconductor
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BA982 LL4148 LS4154 BAV21 LS4150 |
SILICON, VHF BAND, MIXER DIODE 0.15 A, 100 V, SILICON, SIGNAL DIODE, DO-213AA 0.15 A, 35 V, SILICON, SIGNAL DIODE 0.25 A, 250 V, SILICON, SIGNAL DIODE, DO-35 0.3 A, 50 V, SILICON, SIGNAL DIODE
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TEMIC SEMICONDUCTORS
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2SK1228TMG MA3027-LH MA3027TSK MA3150-LTMG MA3360- |
100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 2.7 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE 0.1 A, SILICON, SIGNAL DIODE SILICON, PIN DIODE UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR 0.035 A, 2 ELEMENT, SILICON, SIGNAL DIODE
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PANASONIC CORP
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SR02150 SR0220 SR02100-HF-T SR02200-HF-F SR0220-HF |
LOW Vf SCHOTTKY BARRIER RECTIFIER 0.2 A, 100 V, SILICON, SIGNAL DIODE, DO-41 0.2 A, 200 V, SILICON, SIGNAL DIODE, DO-41 0.2 A, 20 V, SILICON, SIGNAL DIODE, DO-41 0.2 A, 150 V, SILICON, SIGNAL DIODE, DO-41
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Rectron Semiconductor RECTRON LTD
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BFP25 BFP22 Q62702-F721 Q62702-F621 Q62702-F201 Q6 |
NPN Silicon Transistor with high Reve... From old datasheet system NPN Silicon Transistors with High Reverse Voltage Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% NPN Silicon RF Transisrors NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) NPN硅晶体管(高耐压l低集电极发射极饱和电压)
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SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
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MAC08BT105 MAC08BT1G MAC08MT1G MAC08MT1 MAC08BT1 |
Silicon Bidirectional Thyristor(0.8A锛?00V涓????????纭???哥?) Sensitive Gate Triacs Silicon Bidirectional Thyristors Silicon Bidirectional Thyristor(0.8A00V三端双向可控硅晶闸管) 200 V, 0.8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-261AA
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ONSEMI[ON Semiconductor]
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