PART |
Description |
Maker |
KU086N10F KU086N10P |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
KUS086N10F |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
KU024N06P |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
KUS086N10D |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
KUS035N06F |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
2SK3019 2SK3019TL |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset Transistors > MOS FET > Small Signal MOS FET
|
ROHM
|
2SJ357 D10803EJ3V0DS00 2SJ357-T1 2SJ357-T2 |
P-channel MOS FET(-30V, -3A) P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH From old datasheet system
|
NEC[NEC]
|
2SJ355 2SJ355-T1 2SJ355-T2 D11217EJ1V0DS00 |
From old datasheet system P-CHANNEL MOS FET FOR HIGH SWITCHING P-channel MOS FET (-30V, -2A)
|
NEC[NEC]
|
2SJ486 |
RELAY-.5AMP-DC-6V/DIODE RoHS Compliant: Yes 硅P通道MOS FET的低FrequencyPower开 Silicon P Channel MOS FET Low FrequencyPower Switching Silicon P-Channel MOS FET
|
Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
|
2SK2740 |
Transistors > MOS FET > Power MOS FET
|
ROHM
|
2SK439 2SK439E K439 |
Silicon N Channel MOS FET Silicon N-Channel MOS FET 硅N沟道场效应晶体管 TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SPAK 2SK439
|
Hitachi,Ltd. Sanyo Semicon Device Hitachi Semiconductor
|
TZ404CY TZ404 TZ404BD |
20 V, 8 ohm, N-channel enhancement-mode D-MOS FET N-CHANNEL ENHANCEMENT-MODE D-MOS FET ULTRA HIGH-SPEED LOW-COST SWITCH
|
Topaz Semiconductor ETC[ETC] List of Unclassifed Manufacturers
|